|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 83A D2PAK-2 OptiMOS 3
- IPB108N15N3 G
- Infineon Technologies
-
1:
$4.02
-
2,611En existencias
|
N.º de artículo de Mouser
726-IP726-B108N15N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 83A D2PAK-2 OptiMOS 3
|
|
2,611En existencias
|
|
|
$4.02
|
|
|
$2.53
|
|
|
$2.00
|
|
|
$1.79
|
|
|
$1.67
|
|
|
Ver
|
|
|
$1.58
|
|
|
$1.56
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
150 V
|
83 A
|
10.8 mOhms
|
- 20 V, 20 V
|
2 V
|
41 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 120A D2PAK-2
- IPB027N10N5ATMA1
- Infineon Technologies
-
1:
$6.01
-
1,200En existencias
|
N.º de artículo de Mouser
726-IPB027N10N5ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 120A D2PAK-2
|
|
1,200En existencias
|
|
|
$6.01
|
|
|
$3.87
|
|
|
$3.11
|
|
|
$2.67
|
|
|
$2.32
|
|
|
Ver
|
|
|
$2.18
|
|
|
$2.16
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
100 V
|
120 A
|
3.5 mOhms
|
- 20 V, 20 V
|
2.2 V
|
112 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 90A TDSON-8
- BSC070N10NS5ATMA1
- Infineon Technologies
-
1:
$2.62
-
232En existencias
-
25,000En pedido
|
N.º de artículo de Mouser
726-BSC070N10NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 90A TDSON-8
|
|
232En existencias
25,000En pedido
Existencias:
232 Se puede enviar inmediatamente
En pedido:
15,000 Se espera el 07/15/2026
10,000 Se espera el 07/16/2026
Plazo de entrega de fábrica:
52 Semanas
|
|
|
$2.62
|
|
|
$1.68
|
|
|
$1.14
|
|
|
$0.832
|
|
|
Ver
|
|
|
$0.641
|
|
|
$0.746
|
|
|
$0.697
|
|
|
$0.641
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
80 A
|
7 mOhms
|
- 20 V, 20 V
|
2.2 V
|
30 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 100A D2PAK-2 OptiMOS 3
- IPB072N15N3 G
- Infineon Technologies
-
1:
$5.56
-
581En existencias
-
1,000Se espera el 09/10/2026
|
N.º de artículo de Mouser
726-IPB072N15N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 100A D2PAK-2 OptiMOS 3
|
|
581En existencias
1,000Se espera el 09/10/2026
|
|
|
$5.56
|
|
|
$3.64
|
|
|
$2.72
|
|
|
$2.37
|
|
|
$2.00
|
|
|
$1.99
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
150 V
|
100 A
|
7.2 mOhms
|
- 20 V, 20 V
|
2 V
|
70 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 83A TO220-3 OptiMOS 3
- IPP111N15N3 G
- Infineon Technologies
-
1:
$4.71
-
718En existencias
|
N.º de artículo de Mouser
726-IPP111N15N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 83A TO220-3 OptiMOS 3
|
|
718En existencias
|
|
|
$4.71
|
|
|
$3.08
|
|
|
$2.30
|
|
|
$1.92
|
|
|
Ver
|
|
|
$1.78
|
|
|
$1.69
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
150 V
|
83 A
|
9.4 mOhms
|
- 20 V, 20 V
|
2 V
|
55 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
OptiMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 50A TO220-3 OptiMOS 3
- IPP200N15N3 G
- Infineon Technologies
-
1:
$3.67
-
707En existencias
|
N.º de artículo de Mouser
726-IPP200N15N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 50A TO220-3 OptiMOS 3
|
|
707En existencias
|
|
|
$3.67
|
|
|
$2.39
|
|
|
$1.68
|
|
|
$1.40
|
|
|
Ver
|
|
|
$1.29
|
|
|
$1.22
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
150 V
|
50 A
|
20 mOhms
|
- 20 V, 20 V
|
2 V
|
23 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
OptiMOS
|
Tube
|
|
Puerto Rico