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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 90A TDSON-8
- BSC070N10NS5ATMA1
- Infineon Technologies
-
1:
$2.23
-
4,818En existencias
-
10,000Se espera el 05/28/2026
|
N.º de artículo de Mouser
726-BSC070N10NS5ATMA
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Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 90A TDSON-8
|
|
4,818En existencias
10,000Se espera el 05/28/2026
|
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$2.23
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$1.34
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$0.949
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$0.774
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Ver
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$0.642
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$0.688
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$0.677
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|
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$0.642
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|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
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SMD/SMT
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TDSON-8
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N-Channel
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1 Channel
|
100 V
|
80 A
|
7 mOhms
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- 20 V, 20 V
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2.2 V
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30 nC
|
- 55 C
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+ 150 C
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83 W
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Enhancement
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OptiMOS
|
Reel, Cut Tape, MouseReel
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|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 120A D2PAK-2
- IPB027N10N5ATMA1
- Infineon Technologies
-
1:
$5.65
-
1,420En existencias
|
N.º de artículo de Mouser
726-IPB027N10N5ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 120A D2PAK-2
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|
1,420En existencias
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|
|
$5.65
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|
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$3.65
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$2.69
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|
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$2.41
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|
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$2.25
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|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
100 V
|
120 A
|
3.5 mOhms
|
- 20 V, 20 V
|
2.2 V
|
112 nC
|
- 55 C
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+ 175 C
|
250 W
|
Enhancement
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OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 100A D2PAK-2 OptiMOS 3
- IPB072N15N3 G
- Infineon Technologies
-
1:
$4.06
-
1,731En existencias
|
N.º de artículo de Mouser
726-IPB072N15N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 100A D2PAK-2 OptiMOS 3
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1,731En existencias
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|
|
$4.06
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|
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$2.65
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|
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$2.08
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$1.81
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|
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$1.53
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|
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$1.51
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|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
150 V
|
100 A
|
7.2 mOhms
|
- 20 V, 20 V
|
2 V
|
70 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 83A D2PAK-2 OptiMOS 3
- IPB108N15N3 G
- Infineon Technologies
-
1:
$3.99
-
2,624En existencias
|
N.º de artículo de Mouser
726-IP726-B108N15N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 83A D2PAK-2 OptiMOS 3
|
|
2,624En existencias
|
|
|
$3.99
|
|
|
$2.51
|
|
|
$2.03
|
|
|
$1.72
|
|
|
$1.60
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
150 V
|
83 A
|
10.8 mOhms
|
- 20 V, 20 V
|
2 V
|
41 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 83A TO220-3 OptiMOS 3
- IPP111N15N3 G
- Infineon Technologies
-
1:
$4.88
-
718En existencias
|
N.º de artículo de Mouser
726-IPP111N15N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 83A TO220-3 OptiMOS 3
|
|
718En existencias
|
|
|
$4.88
|
|
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$3.19
|
|
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$2.50
|
|
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$2.08
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|
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Ver
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|
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$1.93
|
|
|
$1.81
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
150 V
|
83 A
|
9.4 mOhms
|
- 20 V, 20 V
|
2 V
|
55 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
OptiMOS
|
Tube
|
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 50A TO220-3 OptiMOS 3
- IPP200N15N3 G
- Infineon Technologies
-
1:
$3.36
-
222En existencias
-
500Se espera el 07/02/2026
|
N.º de artículo de Mouser
726-IPP200N15N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 50A TO220-3 OptiMOS 3
|
|
222En existencias
500Se espera el 07/02/2026
|
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$3.36
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$2.19
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$1.68
|
|
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$1.40
|
|
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$1.22
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Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
150 V
|
50 A
|
20 mOhms
|
- 20 V, 20 V
|
2 V
|
23 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
OptiMOS
|
Tube
|
|
Puerto Rico