IXGN50N120C3H1

IXYS
747-IXGN50N120C3H1
IXGN50N120C3H1

Fabricante:

Descripción:
Módulos IGBT High Frequency Range >40khz CIGBT w/Diode

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Disponibilidad

Existencias:
No en existencias
Plazo de entrega de fábrica:
32 Semanas Tiempo estimado de producción de fábrica.
Se establece un tiempo de entrega prolongado para este producto.
Mínimo: 300   Múltiples: 10
Precio unitario:
$-.--
Precio ext.:
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Est. Tarifa:

Precio (USD)

Cantidad Precio unitario
Precio ext.
$25.93 $7,779.00

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IXYS
Categoría de producto: Módulos IGBT
RoHS:  
IGBT Modules
1.2 kV
95 A
100 nA
460 W
SOT-227B-4
- 55 C
+ 150 C
Tube
Marca: IXYS
Máximo voltaje puerta-emisor: 20 V
Estilo de montaje: Screw Mount
Tipo de producto: IGBT Modules
Serie: IXGN50N120
Cantidad de empaque de fábrica: 10
Subcategoría: IGBTs
Tecnología: Si
Nombre comercial: GenX3
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Atributos seleccionados: 0

Hoja de datos

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

GenX3™ Insulated-Gate Bipolar Transistors (IGBTs)

IXYS GenX3™ Insulated-Gate Bipolar Transistors (IGBTs) are PT (Punch Through) manufactured using a robust HDMOS IGBT process. The 600V GenX3 components are optimized for high-current applications requiring soft-switching frequencies upwards of 200kHz and hard-switching frequencies of 40kHz. The 600V IGBTs provide higher surge current capabilities, a lower saturation voltage, and lower energy losses offering designers a viable option for switching applications at the 600V range. The 1200V GenX3 IGBTs offer lower saturation voltages, lower switching losses, and higher surge current capabilities. The 1200V models are aimed at the high-voltage power conversion market.

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