|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPDD60R190G7XTMA1
- Infineon Technologies
-
1:
$3.17
-
1,483En existencias
|
N.º de artículo de Mouser
726-IPDD60R190G7XTM1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,483En existencias
|
|
|
$3.17
|
|
|
$2.06
|
|
|
$1.43
|
|
|
$1.24
|
|
|
$1.12
|
|
|
$0.986
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
190 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 55 C
|
+ 150 C
|
76 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPT60R050G7XTMA1
- Infineon Technologies
-
1:
$9.01
-
2,682En existencias
|
N.º de artículo de Mouser
726-IPT60R050G7XTMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
2,682En existencias
|
|
|
$9.01
|
|
|
$6.16
|
|
|
$4.92
|
|
|
$4.91
|
|
|
$4.37
|
|
|
$4.01
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
44 A
|
50 mOhms
|
- 20 V, 20 V
|
3 V
|
68 nC
|
- 55 C
|
+ 150 C
|
245 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER NEW
- IPT60R102G7XTMA1
- Infineon Technologies
-
1:
$5.07
-
1,783En existencias
|
N.º de artículo de Mouser
726-IPT60R102G7XTMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER NEW
|
|
1,783En existencias
|
|
|
$5.07
|
|
|
$3.37
|
|
|
$2.42
|
|
|
$2.30
|
|
|
Ver
|
|
|
$1.87
|
|
|
$2.07
|
|
|
$1.87
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
23 A
|
88 mOhms
|
- 20 V, 20 V
|
3 V
|
34 nC
|
- 55 C
|
+ 150 C
|
141 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPDD60R080G7XTMA1
- Infineon Technologies
-
1:
$6.27
-
1,354En existencias
|
N.º de artículo de Mouser
726-IPDD60R080G7XTM1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,354En existencias
|
|
|
$6.27
|
|
|
$4.46
|
|
|
$3.27
|
|
|
$2.95
|
|
|
$2.67
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
29 A
|
80 mOhms
|
- 20 V, 20 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
174 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPT60R080G7XTMA1
- Infineon Technologies
-
1:
$5.65
-
2,005En existencias
|
N.º de artículo de Mouser
726-IPT60R080G7XTMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
2,005En existencias
|
|
|
$5.65
|
|
|
$4.26
|
|
|
$3.08
|
|
|
$3.07
|
|
|
Ver
|
|
|
$2.51
|
|
|
$2.79
|
|
|
$2.51
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
29 A
|
80 mOhms
|
- 30 V, 30 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
167 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER NEW
- IPT60R028G7XTMA1
- Infineon Technologies
-
1:
$14.06
-
2,122En existencias
|
N.º de artículo de Mouser
726-IPT60R028G7XTMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER NEW
|
|
2,122En existencias
|
|
|
$14.06
|
|
|
$9.87
|
|
|
$8.79
|
|
|
$8.12
|
|
|
$7.17
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
75 A
|
28 mOhms
|
- 20 V, 20 V
|
3 V
|
123 nC
|
- 55 C
|
+ 150 C
|
391 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPDD60R150G7XTMA1
- Infineon Technologies
-
1:
$3.90
-
1,136En existencias
|
N.º de artículo de Mouser
726-IPDD60R150G7XTM1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,136En existencias
|
|
|
$3.90
|
|
|
$2.57
|
|
|
$1.88
|
|
|
$1.69
|
|
|
$1.53
|
|
|
$1.37
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
150 mOhms
|
- 20 V, 20 V
|
3 V
|
23 nC
|
- 55 C
|
+ 150 C
|
95 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPDD60R125G7XTMA1
- Infineon Technologies
-
1:
$2.13
-
665En existencias
|
N.º de artículo de Mouser
726-IPDD60R125G7XTM1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
665En existencias
|
|
|
$2.13
|
|
|
$1.99
|
|
|
$1.96
|
|
|
$1.95
|
|
|
$1.61
|
|
|
$1.60
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
125 mOhms
|
- 20 V, 20 V
|
3 V
|
27 nC
|
- 55 C
|
+ 150 C
|
120 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPDD60R050G7XTMA1
- Infineon Technologies
-
1:
$9.14
-
21En existencias
|
N.º de artículo de Mouser
726-IPDD60R050G7XTM1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
21En existencias
|
|
|
$9.14
|
|
|
$6.53
|
|
|
$5.34
|
|
|
$5.00
|
|
|
$4.36
|
|
|
$4.36
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
47 A
|
50 mOhms
|
- 20 V, 20 V
|
3 V
|
68 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER NEW
- IPT60R125G7XTMA1
- Infineon Technologies
-
1:
$4.31
-
Plazo de entrega no en existencias 12 Semanas
-
NRND
|
N.º de artículo de Mouser
726-IPT60R125G7XTMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER NEW
|
|
Plazo de entrega no en existencias 12 Semanas
|
|
|
$4.31
|
|
|
$2.85
|
|
|
$2.01
|
|
|
$1.84
|
|
|
$1.71
|
|
|
$1.49
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
108 mOhms
|
- 20 V, 20 V
|
3 V
|
27 nC
|
- 55 C
|
+ 150 C
|
120 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPDD60R102G7XTMA1
- Infineon Technologies
-
1,700:
$2.17
-
Plazo de entrega no en existencias 19 Semanas
|
N.º de artículo de Mouser
726-IPDD60R102G7XTM1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
Plazo de entrega no en existencias 19 Semanas
|
|
Min.: 1,700
Mult.: 1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
23 A
|
102 mOhms
|
- 20 V, 20 V
|
3 V
|
34 nC
|
- 55 C
|
+ 150 C
|
139 W
|
Enhancement
|
|
Reel
|
|