|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPT60R080G7XTMA1
- Infineon Technologies
-
1:
$7.52
-
85En existencias
|
N.º de artículo de Mouser
726-IPT60R080G7XTMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
85En existencias
|
|
|
$7.52
|
|
|
$4.04
|
|
|
$3.70
|
|
|
$3.54
|
|
|
$3.31
|
|
|
$3.31
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
29 A
|
80 mOhms
|
- 30 V, 30 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
167 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER NEW
- IPT60R028G7XTMA1
- Infineon Technologies
-
1:
$19.15
-
1,960En existencias
-
2,000En pedido
|
N.º de artículo de Mouser
726-IPT60R028G7XTMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER NEW
|
|
1,960En existencias
2,000En pedido
|
|
|
$19.15
|
|
|
$12.17
|
|
|
$12.14
|
|
|
$11.48
|
|
|
$10.87
|
|
|
$10.87
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
75 A
|
28 mOhms
|
- 20 V, 20 V
|
3 V
|
123 nC
|
- 55 C
|
+ 150 C
|
391 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPDD60R080G7XTMA1
- Infineon Technologies
-
1:
$7.88
-
1,174En existencias
|
N.º de artículo de Mouser
726-IPDD60R080G7XTM1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,174En existencias
|
|
|
$7.88
|
|
|
$4.25
|
|
|
$3.90
|
|
|
$3.76
|
|
|
$3.55
|
|
|
$3.55
|
|
Min.: 1
Mult.: 1
:
1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
29 A
|
80 mOhms
|
- 20 V, 20 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
174 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER NEW
- IPT60R102G7XTMA1
- Infineon Technologies
-
1:
$6.05
-
1,097En existencias
|
N.º de artículo de Mouser
726-IPT60R102G7XTMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER NEW
|
|
1,097En existencias
|
|
|
$6.05
|
|
|
$3.18
|
|
|
$2.91
|
|
|
$2.65
|
|
|
$2.53
|
|
|
$2.50
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
23 A
|
88 mOhms
|
- 20 V, 20 V
|
3 V
|
34 nC
|
- 55 C
|
+ 150 C
|
141 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPDD60R125G7XTMA1
- Infineon Technologies
-
1:
$5.87
-
143En existencias
|
N.º de artículo de Mouser
726-IPDD60R125G7XTM1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
143En existencias
|
|
|
$5.87
|
|
|
$3.32
|
|
|
$2.87
|
|
|
$2.23
|
|
|
$2.10
|
|
|
$2.10
|
|
Min.: 1
Mult.: 1
:
1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
125 mOhms
|
- 20 V, 20 V
|
3 V
|
27 nC
|
- 55 C
|
+ 150 C
|
120 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPT60R050G7XTMA1
- Infineon Technologies
-
1:
$11.38
-
14En existencias
-
2,000Se espera el 02/25/2027
|
N.º de artículo de Mouser
726-IPT60R050G7XTMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
14En existencias
2,000Se espera el 02/25/2027
|
|
|
$11.38
|
|
|
$6.32
|
|
|
$5.66
|
|
|
$5.35
|
|
|
$5.29
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
44 A
|
50 mOhms
|
- 20 V, 20 V
|
3 V
|
68 nC
|
- 55 C
|
+ 150 C
|
245 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPDD60R150G7XTMA1
- Infineon Technologies
-
1:
$5.11
-
148En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-IPDD60R150G7XTM1
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
148En existencias
|
|
|
$5.11
|
|
|
$2.64
|
|
|
$2.40
|
|
|
$1.97
|
|
|
$1.95
|
|
|
$1.84
|
|
Min.: 1
Mult.: 1
:
1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
150 mOhms
|
- 20 V, 20 V
|
3 V
|
23 nC
|
- 55 C
|
+ 150 C
|
95 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPDD60R050G7XTMA1
- Infineon Technologies
-
1:
$10.93
-
1,700Se espera el 04/29/2027
|
N.º de artículo de Mouser
726-IPDD60R050G7XTM1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,700Se espera el 04/29/2027
|
|
|
$10.93
|
|
|
$6.08
|
|
|
$5.79
|
|
|
$5.48
|
|
|
$5.48
|
|
Min.: 1
Mult.: 1
:
1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
47 A
|
50 mOhms
|
- 20 V, 20 V
|
3 V
|
68 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPDD60R190G7XTMA1
- Infineon Technologies
-
1:
$3.87
-
3,400Se espera el 01/07/2027
|
N.º de artículo de Mouser
726-IPDD60R190G7XTM1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
3,400Se espera el 01/07/2027
|
|
|
$3.87
|
|
|
$2.01
|
|
|
$1.81
|
|
|
$1.40
|
|
|
$1.31
|
|
|
$1.31
|
|
Min.: 1
Mult.: 1
:
1,700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
190 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 55 C
|
+ 150 C
|
76 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER NEW
- IPT60R125G7XTMA1
- Infineon Technologies
-
2,000:
$2.00
-
Plazo de entrega no en existencias 52 Semanas
-
NRND
|
N.º de artículo de Mouser
726-IPT60R125G7XTMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER NEW
|
|
Plazo de entrega no en existencias 52 Semanas
|
|
Min.: 2,000
Mult.: 2,000
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
108 mOhms
|
- 20 V, 20 V
|
3 V
|
27 nC
|
- 55 C
|
+ 150 C
|
120 W
|
Enhancement
|
|
Reel
|
|