|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 120A D2PAK-2 OptiMOS 3
- IPB027N10N3 G
- Infineon Technologies
-
1:
$4.97
-
5,056En existencias
|
N.º de artículo de Mouser
726-IPB027N10N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 120A D2PAK-2 OptiMOS 3
|
|
5,056En existencias
|
|
|
$4.97
|
|
|
$3.64
|
|
|
$2.95
|
|
|
$2.62
|
|
|
$2.32
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
100 V
|
120 A
|
2.3 mOhms
|
- 20 V, 20 V
|
2 V
|
206 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 71A TDSON-8 OptiMOS 2
- BSC118N10NS G
- Infineon Technologies
-
1:
$1.99
-
4,333En existencias
-
NRND
|
N.º de artículo de Mouser
726-BSC118N10NSG
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 71A TDSON-8 OptiMOS 2
|
|
4,333En existencias
|
|
|
$1.99
|
|
|
$1.29
|
|
|
$0.855
|
|
|
$0.679
|
|
|
Ver
|
|
|
$0.519
|
|
|
$0.625
|
|
|
$0.602
|
|
|
$0.519
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
11 A
|
11.8 mOhms
|
- 20 V, 20 V
|
4 V
|
56 nC
|
- 55 C
|
+ 150 C
|
114 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 75V 120A D2PAK-2 OptiMOS 3
- IPB020NE7N3 G
- Infineon Technologies
-
1:
$6.55
-
1,971En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-IPB020NE7N3GXT
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 75V 120A D2PAK-2 OptiMOS 3
|
|
1,971En existencias
|
|
|
$6.55
|
|
|
$4.39
|
|
|
$3.17
|
|
|
$2.94
|
|
|
$2.75
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
75 V
|
120 A
|
2 mOhms
|
- 20 V, 20 V
|
2.3 V
|
155 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 18A TSDSON-8 OptiMOS 3
- BSZ440N10NS3 G
- Infineon Technologies
-
1:
$1.17
-
76,925En existencias
|
N.º de artículo de Mouser
726-BSZ440N10NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 18A TSDSON-8 OptiMOS 3
|
|
76,925En existencias
|
|
|
$1.17
|
|
|
$0.732
|
|
|
$0.482
|
|
|
$0.382
|
|
|
$0.346
|
|
|
$0.293
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
18 A
|
38 mOhms
|
- 20 V, 20 V
|
2 V
|
9.1 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 120A D2PAK-2 OptiMOS 3
- IPB025N08N3 G
- Infineon Technologies
-
1:
$5.40
-
5,525En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-IPB025N08N3G
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 120A D2PAK-2 OptiMOS 3
|
|
5,525En existencias
|
|
|
$5.40
|
|
|
$3.45
|
|
|
$2.72
|
|
|
$2.47
|
|
|
$2.31
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
80 V
|
120 A
|
2.4 mOhms
|
- 20 V, 20 V
|
2.8 V
|
206 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 90A TDSON-8 OptiMOS 3
- BSC060N10NS3 G
- Infineon Technologies
-
1:
$2.72
-
15,982En existencias
-
NRND
|
N.º de artículo de Mouser
726-BSC060N10NS3G
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 90A TDSON-8 OptiMOS 3
|
|
15,982En existencias
|
|
|
$2.72
|
|
|
$1.74
|
|
|
$1.19
|
|
|
$0.987
|
|
|
$0.914
|
|
|
$0.855
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
90 A
|
5.3 mOhms
|
- 20 V, 20 V
|
2 V
|
68 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
- BSC265N10LSF G
- Infineon Technologies
-
1:
$1.50
-
2,155En existencias
-
NRND
|
N.º de artículo de Mouser
726-BSC265N10LSFG
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
|
|
2,155En existencias
|
|
|
$1.50
|
|
|
$0.946
|
|
|
$0.628
|
|
|
$0.496
|
|
|
$0.394
|
|
|
Ver
|
|
|
$0.447
|
|
|
$0.41
|
|
|
$0.392
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
40 A
|
20 mOhms
|
- 20 V, 20 V
|
1.2 V
|
21 nC
|
- 55 C
|
+ 150 C
|
78 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 75V 100A TDSON-8 OptiMOS 3
- BSC042NE7NS3 G
- Infineon Technologies
-
1:
$3.36
-
3,510En existencias
|
N.º de artículo de Mouser
726-BSC042NE7NS3GXT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 75V 100A TDSON-8 OptiMOS 3
|
|
3,510En existencias
|
|
|
$3.36
|
|
|
$2.17
|
|
|
$1.55
|
|
|
$1.32
|
|
|
$1.13
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
75 V
|
100 A
|
3.7 mOhms
|
- 20 V, 20 V
|
2.3 V
|
69 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 100A D2PAK-2 OptiMOS 3
- IPB072N15N3 G
- Infineon Technologies
-
1:
$4.06
-
1,731En existencias
|
N.º de artículo de Mouser
726-IPB072N15N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 100A D2PAK-2 OptiMOS 3
|
|
1,731En existencias
|
|
|
$4.06
|
|
|
$2.65
|
|
|
$2.08
|
|
|
$1.81
|
|
|
$1.53
|
|
|
$1.51
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
150 V
|
100 A
|
7.2 mOhms
|
- 20 V, 20 V
|
2 V
|
70 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 63A TDSON-8 OptiMOS 3
- BSC109N10NS3 G
- Infineon Technologies
-
1:
$2.10
-
8,378En existencias
-
10,000Se espera el 01/28/2027
|
N.º de artículo de Mouser
726-BSC109N10NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 63A TDSON-8 OptiMOS 3
|
|
8,378En existencias
10,000Se espera el 01/28/2027
|
|
|
$2.10
|
|
|
$1.35
|
|
|
$0.908
|
|
|
$0.723
|
|
|
Ver
|
|
|
$0.641
|
|
|
$0.674
|
|
|
$0.662
|
|
|
$0.641
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
63 A
|
10.9 mOhms
|
- 20 V, 20 V
|
3.5 V
|
35 nC
|
- 55 C
|
+ 150 C
|
78 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 21A TDSON-8 OptiMOS 3
- BSC520N15NS3 G
- Infineon Technologies
-
1:
$1.80
-
8,602En existencias
-
30,000En pedido
|
N.º de artículo de Mouser
726-BSC520N15NS3GXT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 21A TDSON-8 OptiMOS 3
|
|
8,602En existencias
30,000En pedido
Existencias:
8,602 Se puede enviar inmediatamente
En pedido:
15,000 Se espera el 04/22/2027
Plazo de entrega de fábrica:
21 Semanas
|
|
|
$1.80
|
|
|
$1.14
|
|
|
$0.762
|
|
|
$0.604
|
|
|
$0.509
|
|
|
$0.475
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
150 V
|
21 A
|
52 mOhms
|
- 20 V, 20 V
|
3 V
|
8.7 nC
|
- 55 C
|
+ 150 C
|
57 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 83A D2PAK-2 OptiMOS 3
- IPB108N15N3 G
- Infineon Technologies
-
1:
$3.99
-
2,624En existencias
|
N.º de artículo de Mouser
726-IP726-B108N15N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 83A D2PAK-2 OptiMOS 3
|
|
2,624En existencias
|
|
|
$3.99
|
|
|
$2.51
|
|
|
$2.03
|
|
|
$1.72
|
|
|
$1.60
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
150 V
|
83 A
|
10.8 mOhms
|
- 20 V, 20 V
|
2 V
|
41 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
- BSC252N10NSF G
- Infineon Technologies
-
1:
$1.75
-
124En existencias
-
5,000Se espera el 11/03/2026
|
N.º de artículo de Mouser
726-BSC252N10NSFG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
|
|
124En existencias
5,000Se espera el 11/03/2026
|
|
|
$1.75
|
|
|
$1.11
|
|
|
$0.739
|
|
|
$0.606
|
|
|
Ver
|
|
|
$0.482
|
|
|
$0.531
|
|
|
$0.515
|
|
|
$0.482
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
40 A
|
19.5 mOhms
|
- 20 V, 20 V
|
2 V
|
17 nC
|
- 55 C
|
+ 150 C
|
78 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 23A TDSON-8 OptiMOS 3
- BSC340N08NS3 G
- Infineon Technologies
-
1:
$1.27
-
27,105En existencias
|
N.º de artículo de Mouser
726-BSC340N08NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 23A TDSON-8 OptiMOS 3
|
|
27,105En existencias
|
|
|
$1.27
|
|
|
$0.799
|
|
|
$0.529
|
|
|
$0.435
|
|
|
Ver
|
|
|
$0.327
|
|
|
$0.375
|
|
|
$0.353
|
|
|
$0.327
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
23 A
|
27.5 mOhms
|
- 20 V, 20 V
|
2 V
|
9.1 nC
|
- 55 C
|
+ 150 C
|
32 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 13A TSDSON-8 OptiMOS 3
- BSZ900N15NS3 G
- Infineon Technologies
-
1:
$1.94
-
1,212En existencias
|
N.º de artículo de Mouser
726-BSZ900N15NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 13A TSDSON-8 OptiMOS 3
|
|
1,212En existencias
|
|
|
$1.94
|
|
|
$1.24
|
|
|
$0.821
|
|
|
$0.673
|
|
|
Ver
|
|
|
$0.535
|
|
|
$0.589
|
|
|
$0.572
|
|
|
$0.535
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
150 V
|
13 A
|
74 mOhms
|
- 20 V, 20 V
|
2 V
|
7 nC
|
- 55 C
|
+ 150 C
|
38 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 100A D2PAK-2 OptiMOS 3
- IPB042N10N3 G
- Infineon Technologies
-
1:
$2.72
-
635En existencias
-
1,000Se espera el 06/11/2026
|
N.º de artículo de Mouser
726-IPB042N10N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 100A D2PAK-2 OptiMOS 3
|
|
635En existencias
1,000Se espera el 06/11/2026
|
|
|
$2.72
|
|
|
$1.75
|
|
|
$1.25
|
|
|
$1.06
|
|
|
$0.907
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
100 V
|
100 A
|
4.2 mOhms
|
- 20 V, 20 V
|
2 V
|
88 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 23A TSDSON-8 OptiMOS 3
- BSZ340N08NS3 G
- Infineon Technologies
-
1:
$1.29
-
1,166En existencias
|
N.º de artículo de Mouser
726-BSZ340N08NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 23A TSDSON-8 OptiMOS 3
|
|
1,166En existencias
|
|
|
$1.29
|
|
|
$0.802
|
|
|
$0.523
|
|
|
$0.403
|
|
|
$0.295
|
|
|
Ver
|
|
|
$0.364
|
|
|
$0.349
|
|
|
$0.292
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
23 A
|
27 mOhms
|
- 20 V, 20 V
|
2 V
|
9.1 nC
|
- 55 C
|
+ 150 C
|
32 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 33A TDSON-8 OptiMOS 3
- BSC360N15NS3 G
- Infineon Technologies
-
1:
$2.44
-
5,000Se espera el 06/11/2026
|
N.º de artículo de Mouser
726-BSC360N15NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 33A TDSON-8 OptiMOS 3
|
|
5,000Se espera el 06/11/2026
|
|
|
$2.44
|
|
|
$1.56
|
|
|
$1.06
|
|
|
$0.884
|
|
|
$0.819
|
|
|
$0.765
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
150 V
|
33 A
|
36 mOhms
|
- 20 V, 20 V
|
3 V
|
12 nC
|
- 55 C
|
+ 150 C
|
74 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 100A TDSON-8 OptiMOS 3
- BSC057N08NS3 G
- Infineon Technologies
-
1:
$2.60
-
606Se espera el 02/18/2027
|
N.º de artículo de Mouser
726-BSC057N08NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 100A TDSON-8 OptiMOS 3
|
|
606Se espera el 02/18/2027
|
|
|
$2.60
|
|
|
$1.68
|
|
|
$1.20
|
|
|
$1.01
|
|
|
$0.93
|
|
|
$0.87
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
100 A
|
4.7 mOhms
|
- 20 V, 20 V
|
2 V
|
56 nC
|
- 55 C
|
+ 150 C
|
114 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 50A TDSON-8 OptiMOS 3
- BSC190N15NS3 G
- Infineon Technologies
-
5,000:
$0.956
-
Plazo de entrega no en existencias 17 Semanas
|
N.º de artículo de Mouser
726-BSC190N15NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 50A TDSON-8 OptiMOS 3
|
|
Plazo de entrega no en existencias 17 Semanas
|
|
Min.: 5,000
Mult.: 5,000
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
150 V
|
50 A
|
16 mOhms
|
- 20 V, 20 V
|
2 V
|
31 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
OptiMOS
|
Reel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 40A TSDSON-8 OptiMOS 3
- BSZ123N08NS3 G
- Infineon Technologies
-
5,000:
$0.552
-
Plazo de entrega no en existencias 52 Semanas
|
N.º de artículo de Mouser
726-BSZ123N08NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 40A TSDSON-8 OptiMOS 3
|
|
Plazo de entrega no en existencias 52 Semanas
|
|
Min.: 5,000
Mult.: 5,000
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
40 A
|
10.3 mOhms
|
- 20 V, 20 V
|
2 V
|
25 nC
|
- 55 C
|
+ 150 C
|
66 W
|
Enhancement
|
OptiMOS
|
Reel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TSDSON-8 OptiMOS 3
- BSZ160N10NS3 G
- Infineon Technologies
-
5,000:
$0.632
-
Plazo de entrega no en existencias 52 Semanas
|
N.º de artículo de Mouser
726-BSZ160N10NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TSDSON-8 OptiMOS 3
|
|
Plazo de entrega no en existencias 52 Semanas
|
|
Min.: 5,000
Mult.: 5,000
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
40 A
|
14 mOhms
|
- 20 V, 20 V
|
2 V
|
25 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
OptiMOS
|
Reel
|
|