Power MOSFETs for Wireless Charging Transmitters

PANJIT Power MOSFETs for Wireless Charging Transmitters provide an advanced solution for the wireless chargers to work properly and efficiently. These wireless charging transmitters are designed to transfer the electromagnetic field to the battery receiver of its application. The power MOSFETs are assembled in a low-profile package that saves space while delivering similar on-resistance and thermal resistance. These devices feature low switching losses, high switching frequency operation, low operating temperature, and low gate drive losses. The power MOSFETs are ideally used in wireless charging pads, wireless charging sockets, wireless charging cases, and wireless charging stations.

Resultados: 130
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (USD) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Modelo ECAD Tecnología Estilo de montaje Paquete / Cubierta Polaridad del transistor Número de canales Vds - Tensión disruptiva entre drenaje y fuente Id - Corriente de drenaje continua Rds On - Resistencia entre drenaje y fuente Vgs - Tensión entre puerta y fuente Vgs th - Tensión umbral entre puerta y fuente Qg - Carga de puerta Temperatura de trabajo mínima Temperatura de trabajo máxima Dp - Disipación de potencia Modo canal Calificación Empaquetado
Panjit Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 20V N-Channel Enhancement Mode MOSFET 7,715En existencias
Min.: 1
Mult.: 1
: 10,000

Si SMD/SMT DFN-1006-3 N-Channel 1 Channel 30 V 300 mA 1.2 Ohms - 10 V, 10 V 1 V 900 pC - 55 C + 150 C 700 mW Enhancement Reel, Cut Tape
Panjit Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V N-Channel Enhancement Mode MOSFET 22,724En existencias
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT DFN-5060-8 N-Channel 1 Channel 60 V 16 A 50 mOhms - 20 V, 20 V 2.5 V 14 nC - 55 C + 175 C 32.6 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Panjit Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 20V P-Channel Enhancement Mode MOSFET 29,301En existencias
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT SOT-23-6 P-Channel 1 Channel 20 V 7.4 A 26 mOhms - 10 V, 10 V 1 V 16.5 nC - 55 C + 150 C 2 W Enhancement Reel, Cut Tape, MouseReel
Panjit Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V N-Channel Enhancement Mode MOSFET 165,415En existencias
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 30 V 4.4 A 48 mOhms - 12 V, 12 V 1.2 V 11.3 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel
Panjit Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V P-Channel Enhancement Mode MOSFET 192,361En existencias
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT SOT-23-3 P-Channel 1 Channel 40 V 3.1 A 88 mOhms - 20 V, 20 V 2.5 V 6 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel
Panjit Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V P-Channel Enhancement Mode MOSFET 1,729En existencias
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 20 V 5.2 A 36 mOhms - 12 V, 12 V 1.2 V 4.1 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel
Panjit Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V N-Channel Enhancement Mode MOSFET 4,081En existencias
Min.: 1
Mult.: 1
: 5,000

Si SMD/SMT N-Channel 1 Channel 60 V 33 A 17 mOhms - 20 V, 20 V 2.5 V 13.5 nC - 55 C + 175 C 2.4 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Panjit Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V N-Channel Enhancement Mode MOSFET 7,750En existencias
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT SOT-23-6 N-Channel 1 Channel 30 V 8 A 23 mOhms - 20 V, 20 V 2.5 V 4.3 nC - 55 C + 150 C 2 W Enhancement Reel, Cut Tape, MouseReel
Panjit Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V N-Channel Enhancement Mode MOSFET 280,527En existencias
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 30 V 4.4 A 48 mOhms - 20 V, 20 V 2.1 V 5.8 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel
Panjit Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V N-Channel Enhancement Mode MOSFET 37,777En existencias
36,000Se espera el 08/13/2026
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 30 V 5.6 A 30 mOhms - 20 V, 20 V 2.1 V 7.8 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel
Panjit Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V N-Channel Enhancement Mode MOSFET 69,978En existencias
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 40 V 4.3 A 42 mOhms - 20 V, 20 V 2.5 V 4.8 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel
Panjit Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V N-Channel Enhancement Mode MOSFET 2,447En existencias
45,000Se espera el 08/31/2026
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 30 V 4.9 A 38 mOhms - 12 V, 12 V 1.3 V 5.7 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel
Panjit Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V P-Channel Enhancement Mode MOSFET 5,328En existencias
15,000Se espera el 09/07/2026
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT SOT-23-3 P-Channel 1 Channel 30 V 3.6 A 54 mOhms - 12 V, 12 V 1.3 V 19 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel
Panjit Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V P-Channel Enhancement Mode MOSFET 3,779En existencias
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT SOT-23-3 P-Channel 1 Channel 30 V 3.6 A 72 mOhms - 12 V, 12 V 1.3 V 15 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel
Panjit Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V P-Channel Enhancement Mode MOSFET 1,939En existencias
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT SOT-23-3 P-Channel 1 Channel 30 V 3.1 A 98 mOhms - 12 V, 12 V 1.3 V 11 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel
Panjit Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V N-Channel Enhancement Mode MOSFET 6,291En existencias
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 30 V 5.6 A 23 mOhms - 20 V, 20 V 2.1 V 12.8 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel
Panjit Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V N-Channel Enhancement Mode MOSFET 3,000En existencias
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 30 V 5.6 A 29.81 mOhms - 20 V, 20 V 2.1 V 7.8 nC - 55 C + 150 C 1.25 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Panjit Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V P-Channel Enhancement Mode MOSFET 12,528En existencias
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT SOT-23-3 P-Channel 1 Channel 30 V 3.6 A 73 mOhms - 20 V, 20 V 2.1 V 10 nC - 55 C + 150 C 1.25 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Panjit Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V P-Channel Enhancement Mode MOSFET 7,855En existencias
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT SOT-23-3 P-Channel 1 Channel 30 V 3.6 A 73 mOhms - 20 V, 20 V 2.1 V 10 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel
Panjit Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V P-Channel Enhancement Mode MOSFET 16,753En existencias
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT SOT-23-3 P-Channel 1 Channel 20 V 3.1 A 100 mOhms - 12 V, 12 V 1.2 V 5.4 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel
Panjit Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 20V N-Channel Enhancement Mode MOSFET 5,542En existencias
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 20 V 4.1 A 56 mOhms - 12 V, 12 V 1.2 V 4.6 nC - 55 C + 150 C 1.25 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Panjit Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 20V N-Channel Enhancement Mode MOSFET 7,399En existencias
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 20 V 4.1 A 56 mOhms - 12 V, 12 V 1.2 V 4.6 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel
Panjit Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 20V P-Channel Enhancement Mode MOSFET 3,567En existencias
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT SOT-23-3 P-Channel 1 Channel 20 V 3.4 A 82 mOhms - 12 V, 12 V 1.2 V 7 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel
Panjit Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V P-Channel Enhancement Mode MOSFET 14,470En existencias
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT SOT-23-3 P-Channel 1 Channel 20 V 4.5 A 88 mOhms - 12 V, 12 V 1.3 V 10 nC - 50 C + 150 C 1.25 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Panjit Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 20V P-Channel Enhancement Mode MOSFETESD Protected 1,470En existencias
3,000Se espera el 06/12/2026
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT SOT-23-3 P-Channel 1 Channel 20 V 4.3 A 50 mOhms - 8 V, 8 V 1 V 24 nC - 55 C + 150 C 1.25 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel