|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- BSZ021N04LS6ATMA1
- Infineon Technologies
-
1:
$1.37
-
8,918En existencias
|
N.º de artículo de Mouser
726-BSZ021N04LS6ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
8,918En existencias
|
|
|
$1.37
|
|
|
$1.11
|
|
|
$0.963
|
|
|
$0.864
|
|
|
Ver
|
|
|
$0.696
|
|
|
$0.774
|
|
|
$0.724
|
|
|
$0.696
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-FL-8
|
N-Channel
|
1 Channel
|
40 V
|
40 A
|
2.4 mOhms
|
- 20 V, 20 V
|
2.3 V
|
31 nC
|
- 55 C
|
+ 175 C
|
83 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 6 low-voltage power MOSFET 40 V in PQFN 3.3x3.3 Source-Down center-gate package with best-price performance
- IQE020N04LM6CGATMA1
- Infineon Technologies
-
1:
$2.87
-
3,500En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-IQE020N04LM6CGAT
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 6 low-voltage power MOSFET 40 V in PQFN 3.3x3.3 Source-Down center-gate package with best-price performance
|
|
3,500En existencias
|
|
|
$2.87
|
|
|
$1.84
|
|
|
$1.25
|
|
|
$1.06
|
|
|
Ver
|
|
|
$0.779
|
|
|
$0.944
|
|
|
$0.893
|
|
|
$0.779
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TTFN-9
|
N-Channel
|
1 Channel
|
40 V
|
166 A
|
2.05 mOhms
|
20 V
|
2.3 V
|
25 nC
|
- 55 C
|
+ 175 C
|
107 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 6 low-voltage power MOSFET 40 V in PQFN 3.3x3.3 Source-Down dual-side cooled package with best-price performance
- IQE020N04LM6CGSCATMA1
- Infineon Technologies
-
1:
$3.08
-
4,193En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-IQE020N04LM6CGSC
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 6 low-voltage power MOSFET 40 V in PQFN 3.3x3.3 Source-Down dual-side cooled package with best-price performance
|
|
4,193En existencias
|
|
|
$3.08
|
|
|
$1.98
|
|
|
$1.36
|
|
|
$1.10
|
|
|
Ver
|
|
|
$0.872
|
|
|
$1.02
|
|
|
$0.993
|
|
|
$0.872
|
|
Min.: 1
Mult.: 1
:
6,000
|
|
|
Si
|
SMD/SMT
|
WTFN-9
|
N-Channel
|
1 Channel
|
40 V
|
166 A
|
2.05 mOhms
|
20 V
|
2.3 V
|
25 nC
|
- 55 C
|
+ 175 C
|
107 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- BSC010N04LS6ATMA1
- Infineon Technologies
-
1:
$2.73
-
7,419En existencias
|
N.º de artículo de Mouser
726-BSC010N04LS6ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
7,419En existencias
|
|
|
$2.73
|
|
|
$1.69
|
|
|
$1.21
|
|
|
$0.968
|
|
|
Ver
|
|
|
$0.851
|
|
|
$0.90
|
|
|
$0.886
|
|
|
$0.851
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-FL-8
|
N-Channel
|
1 Channel
|
40 V
|
100 A
|
1 mOhms
|
- 20 V, 20 V
|
1.3 V
|
67 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- BSC059N04LS6ATMA1
- Infineon Technologies
-
1:
$1.52
-
20,538En existencias
-
50,000En pedido
|
N.º de artículo de Mouser
726-BSC059N04LS6ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
20,538En existencias
50,000En pedido
Existencias:
20,538 Se puede enviar inmediatamente
En pedido:
20,000 Se espera el 07/09/2026
Plazo de entrega de fábrica:
52 Semanas
|
|
|
$1.52
|
|
|
$0.951
|
|
|
$0.627
|
|
|
$0.506
|
|
|
$0.364
|
|
|
Ver
|
|
|
$0.448
|
|
|
$0.395
|
|
|
$0.362
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-FL-8
|
N-Channel
|
1 Channel
|
40 V
|
59 A
|
5.9 mOhms
|
- 20 V, 20 V
|
1.3 V
|
9.4 nC
|
- 55 C
|
+ 175 C
|
38 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- BSZ018N04LS6ATMA1
- Infineon Technologies
-
1:
$1.52
-
4,629En existencias
-
20,000Se espera el 05/27/2027
|
N.º de artículo de Mouser
726-BSZ018N04LS6ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
4,629En existencias
20,000Se espera el 05/27/2027
|
|
|
$1.52
|
|
|
$1.24
|
|
|
$1.08
|
|
|
$0.965
|
|
|
Ver
|
|
|
$0.818
|
|
|
$0.855
|
|
|
$0.819
|
|
|
$0.818
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-FL-8
|
N-Channel
|
1 Channel
|
40 V
|
40 A
|
2.1 mOhms
|
- 20 V, 20 V
|
2.3 V
|
31 nC
|
- 55 C
|
+ 175 C
|
83 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- BSC022N04LS6ATMA1
- Infineon Technologies
-
1:
$2.33
-
245En existencias
-
95,000Se espera el 08/05/2026
|
N.º de artículo de Mouser
726-BSC022N04LS6ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
245En existencias
95,000Se espera el 08/05/2026
|
|
|
$2.33
|
|
|
$1.48
|
|
|
$0.998
|
|
|
$0.809
|
|
|
Ver
|
|
|
$0.643
|
|
|
$0.725
|
|
|
$0.677
|
|
|
$0.643
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-FL-8
|
N-Channel
|
1 Channel
|
40 V
|
100 A
|
2.2 mOhms
|
- 20 V, 20 V
|
1.3 V
|
28 nC
|
- 55 C
|
+ 175 C
|
79 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- BSC007N04LS6ATMA1
- Infineon Technologies
-
1:
$5.23
-
39,960En pedido
|
N.º de artículo de Mouser
726-BSC007N04LS6ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
39,960En pedido
En pedido:
14,960 Se espera el 12/24/2026
25,000 Se espera el 12/31/2026
Plazo de entrega de fábrica:
52 Semanas
|
|
|
$5.23
|
|
|
$3.42
|
|
|
$2.55
|
|
|
$2.14
|
|
|
Ver
|
|
|
$1.86
|
|
|
$1.98
|
|
|
$1.86
|
|
|
$1.86
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-FL-8
|
N-Channel
|
1 Channel
|
40 V
|
381 A
|
700 uOhms
|
- 20 V, 20 V
|
1.3 V
|
94 nC
|
- 55 C
|
+ 175 C
|
188 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- BSZ063N04LS6ATMA1
- Infineon Technologies
-
1:
$1.86
-
173,566En pedido
|
N.º de artículo de Mouser
726-BSZ063N04LS6ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
173,566En pedido
En pedido:
33,566 Se espera el 02/04/2027
50,000 Se espera el 04/15/2027
90,000 Se espera el 05/20/2027
Plazo de entrega de fábrica:
52 Semanas
|
|
|
$1.86
|
|
|
$1.15
|
|
|
$0.759
|
|
|
$0.597
|
|
|
Ver
|
|
|
$0.41
|
|
|
$0.51
|
|
|
$0.462
|
|
|
$0.41
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-FL-8
|
N-Channel
|
1 Channel
|
40 V
|
40 A
|
7 mOhms
|
- 20 V, 20 V
|
2.3 V
|
9.5 nC
|
- 55 C
|
+ 175 C
|
38 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- BSZ024N04LS6ATMA1
- Infineon Technologies
-
1:
$2.22
-
13,336Se espera el 05/20/2027
|
N.º de artículo de Mouser
726-BSZ024N04LS6ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
13,336Se espera el 05/20/2027
|
|
|
$2.22
|
|
|
$1.41
|
|
|
$0.952
|
|
|
$0.771
|
|
|
Ver
|
|
|
$0.614
|
|
|
$0.691
|
|
|
$0.646
|
|
|
$0.614
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-FL-8
|
N-Channel
|
1 Channel
|
40 V
|
40 A
|
2.8 mOhms
|
- 20 V, 20 V
|
2.3 V
|
25 nC
|
- 55 C
|
+ 175 C
|
75 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|