|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
- IPT044N15N5ATMA1
- Infineon Technologies
-
1:
$5.34
-
4,102En existencias
|
N.º de artículo de Mouser
726-IPT044N15N5ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
|
|
4,102En existencias
|
|
|
$5.34
|
|
|
$3.56
|
|
|
$2.55
|
|
|
$2.45
|
|
|
$2.07
|
|
|
Ver
|
|
|
$2.39
|
|
|
$2.00
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
150 V
|
174 A
|
4.4 mOhms
|
- 20 V, 20 V
|
4.6 V
|
67 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
- IQD063N15NM5CGATMA1
- Infineon Technologies
-
1:
$4.29
-
4,082En existencias
|
N.º de artículo de Mouser
726-IQD063N15NM5CGAT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
|
|
4,082En existencias
|
|
|
$4.29
|
|
|
$2.99
|
|
|
$2.57
|
|
|
$2.49
|
|
|
Ver
|
|
|
$2.15
|
|
|
$2.42
|
|
|
$2.41
|
|
|
$2.15
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TTFN-9
|
N-Channel
|
1 Channel
|
150 V
|
148 A
|
6.32 Ohms
|
- 10 V, 10 V
|
3 V
|
48 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
- IPT054N15N5ATMA1
- Infineon Technologies
-
1:
$5.05
-
2,676En existencias
|
N.º de artículo de Mouser
726-IPT054N15N5ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
|
|
2,676En existencias
|
|
|
$5.05
|
|
|
$3.36
|
|
|
$2.40
|
|
|
$2.28
|
|
|
$1.98
|
|
|
Ver
|
|
|
$2.22
|
|
|
$1.85
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
150 V
|
143 A
|
5.4 mOhms
|
- 20 V, 20 V
|
4.6 V
|
55 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
- IPT039N15N5ATMA1
- Infineon Technologies
-
1:
$5.89
-
3,670En existencias
|
N.º de artículo de Mouser
726-IPT039N15N5ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
|
|
3,670En existencias
|
|
|
$5.89
|
|
|
$3.95
|
|
|
$2.85
|
|
|
$2.80
|
|
|
Ver
|
|
|
$2.28
|
|
|
$2.66
|
|
|
$2.28
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
150 V
|
190 A
|
4.3 mOhms
|
- 20 V, 20 V
|
4.6 V
|
78 nC
|
- 55 C
|
+ 175 C
|
319 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
- IPT063N15N5ATMA1
- Infineon Technologies
-
1:
$4.76
-
1,781En existencias
|
N.º de artículo de Mouser
726-IPT063N15N5ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
|
|
1,781En existencias
|
|
|
$4.76
|
|
|
$3.16
|
|
|
$2.25
|
|
|
$2.22
|
|
|
$2.15
|
|
|
$1.71
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
150 V
|
122 A
|
6.3 mOhms
|
- 20 V, 20 V
|
4.6 V
|
47 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
Infineon Technologies IPP076N15N5XKSA1
- IPP076N15N5XKSA1
- Infineon Technologies
-
1:
$3.55
-
891En existencias
|
N.º de artículo de Mouser
726-IPP076N15N5XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
|
|
891En existencias
|
|
|
$3.55
|
|
|
$1.80
|
|
|
$1.63
|
|
|
$1.32
|
|
|
Ver
|
|
|
$1.20
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
150 V
|
112 A
|
7.6 mOhms
|
- 20 V, 20 V
|
4.6 V
|
49 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
|
Tube
|
|
