Tipos de Semiconductores discretos
Filtros aplicados:
Toshiba N-Channel/P-Channel Power MOSFETs
03/31/2026
03/31/2026
Ideal for high-speed switching, power management switches, DC-DC converters, and motor drivers.
Toshiba MOSFET N-Ch TPH2R70AR5
10/17/2025
10/17/2025
Ideal for high-efficiency DC-DC converters and is available in a SOP Advance (N) package.
Toshiba Diodos Zener automotrices XCEZ
08/29/2025
08/29/2025
Feature 150mW and 300mW power dissipation and are AEC-Q101 qualified.
Toshiba TRSx SiC Schottky Barrier Diodes
04/04/2025
04/04/2025
These SiC Schottky barrier diodes have a repetitive peak reverse voltage (VRRM) rating of 1200V.
Toshiba L-TOGL & S-TOGL AEC-Q 40V/80V/100V N-Ch MOSFETs
10/14/2024
10/14/2024
Housed in L-TOGL™ package to meet the growing demand for 48V batteries in automotive equipment.
Toshiba TKx Silicon N-Channel MOSFETs
09/13/2024
09/13/2024
Available in U-MOSX-H and DTMOSVI types and offers exceptional performance characteristics.
Toshiba TPH1400CQ5 Silicon N-Channel MOSFETs
09/10/2024
09/10/2024
Features an 8-pin SMT power MOSFET designed with a U-MOSX-H generation Trench process.
Toshiba TPH1100CQ5 Silicon N-Channel MOSFETs
08/12/2024
08/12/2024
Features an 8-pin SMT power MOSFET designed with a U-MOSX-H generation Trench process.
Toshiba UMOS9-H Silicon N-channel MOSFETs
05/13/2024
05/13/2024
Ideal for high-efficiency DC-to-DC converters, switching voltage regulators, and motor drivers.
Toshiba XCUZ Zener Diodes
01/23/2024
01/23/2024
Designed for automotive usage, features 600mW power dissipation and AEC-Q101 qualified.
Toshiba TRSx65H SiC Schottky Barrier Diodes
07/26/2023
07/26/2023
650V devices based on third-generation technology utilizing Schottky metal.
Toshiba SSM14N956L MOSFET
06/09/2023
06/09/2023
Features low source-source on-resistance and is RoHS compatible.
Toshiba XPQR3004PB 40V 400A Automotive MOSFET
02/13/2023
02/13/2023
Offers RDS(ON) of 0.23mΩ (typical) and threshold voltage (Vth) of 2V to 3V, capable of 400A.
Toshiba MOSFET de carburo de silicio de 3ra generación
07/11/2022
07/11/2022
Tecnología SiC para diseños de alta eficiencia y alta velocidad.
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Texas Instruments 2N7002L 6V N-channel MOSFETs
05/18/2026
05/18/2026
Designed to minimize the on-state resistance while maintaining fast switching performance.
Bourns CDSOT23-SM712-Q Surface Mount TVS Diode
05/12/2026
05/12/2026
Provides protection for data ports in accordance with IEC 61000-4-2, IEC 61000-4-4, & IEC 61000-4-5.
Littelfuse Diodos TVS AK-FL
05/04/2026
05/04/2026
Axial leaded, FlatSuppressX™ flat and low clamping bi-directional TVS diodes.
Littelfuse Diodos TVS FlatSuppressX™ TP5.0SMD-FL
05/04/2026
05/04/2026
5000W peak pulse power capability using a 10/1000µs waveform and 6.5W power dissipation.
Littelfuse Diodos TVS FlatSuppressX™ TP1KSMB-FL
05/04/2026
05/04/2026
Designed specifically to protect sensitive electronic equipment from voltage transients.
RECOM Power ICs, Transformers, & Discrete Solutions
04/24/2026
04/24/2026
Features components ideal for energy, industrial, and medical applications.
Littelfuse SJx08x High-Temperature SCRs
04/24/2026
04/24/2026
Voltage of up to 800V, surge current capability of up to 100A, & a temperature rating of +150°C.
Littelfuse QVx35xHx High-Temperature Alternistor TRIACs
04/24/2026
04/24/2026
Offers a 35A rated current and is available in TO-220AB, TO-220 isolated, and TO-263 packages.
Diotec Semiconductor BAS70-05W Schottky Diode
04/16/2026
04/16/2026
Designed for high‑speed switching and voltage clamping in space‑constrained applications.
onsemi NVBYST0D8N08X Single N-Channel Power MOSFET
04/14/2026
04/14/2026
Optimized for high‑voltage operation and withstands fast switching and high-current stresses.
ROHM Semiconductor High-Density SiC Power Modules
04/10/2026
04/10/2026
TRCDRIVE pack™, DOT-247, and HSDIP20 packages contribute to high-performance power conversion.
iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET
04/07/2026
04/07/2026
Low switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.
Vishay Rectificadores de alto voltaje de recuperación estándar S07x-M
04/07/2026
04/07/2026
Glass-passivated surface-mount rectifiers with a maximum VRRM between 100V and 1000V.
Vishay Rectificadores de recuperación rápida RS07x
04/07/2026
04/07/2026
Glass-passivated surface-mount rectifiers with a maximum VRRM between 100V and 800V.
onsemi NTMFD0D9N02P1E MOSFET
04/06/2026
04/06/2026
Dual N-channel MOSFET designed with low Rg for fast switching applications.
Vishay Módulo MOSFET de potencia VS-HOT200C080 de 200 A a 80 V
04/02/2026
04/02/2026
This device reduces board space requirements by up to 15% compared to standard discrete solutions.
Taiwan Semiconductor SMF4LxCA/AH Transient Voltage Suppressor Diodes
04/02/2026
04/02/2026
High-efficiency, low-power, 400W, 5V to 75V surface-mount devices ideal for automated placement.
Taiwan Semiconductor SMA6FxCAH/SMA6SxCAH TVS Diodes
04/02/2026
04/02/2026
AEC-Q101 qualified 600W, 12V to 60V surface-mount devices operating at 0.094%/°C maximum VBR.
Toshiba N-Channel/P-Channel Power MOSFETs
03/31/2026
03/31/2026
Ideal for high-speed switching, power management switches, DC-DC converters, and motor drivers.
STMicroelectronics STL059N4S8AG Power MOSFET
03/31/2026
03/31/2026
A 40V N-channel enhancement mode Power MOSFET designed in Smart STripFET F8 technology.
Infineon Technologies OptiMOS™ 6 60V Power MOSFETs
03/27/2026
03/27/2026
Delivers superior performance to OptiMOS 5 via robust power MOSFET technology.
Infineon Technologies Multi-Purpose Diodes for ESD Protection
03/27/2026
03/27/2026
Offering the best protection in a small footprint, the diodes deliver superior ESD performance.
Infineon Technologies N-Channel OptiMOS™ 7 25V Power MOSFETs
03/27/2026
03/27/2026
Application-optimized performance, enabling peak performance for data centers, servers, & AI.
RECOM Power RVS002 Micropower Isolated Power Bridge Rectifiers
03/24/2026
03/24/2026
Compact and ideal for micro-power isolated power supply applications with limited space.
iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFET
03/24/2026
03/24/2026
Delivers ultra-low conduction and switching losses in a robust TO-220 package.
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