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NTH4L060N065SC1

Name: onsemi NTH4L060N065SC1
Brand: onsemi
SKU: 863-NTH4L060N065SC1
Price: 10.94 USD
Availability: InStock

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Mouser #:

863-NTH4L060N065SC1

Mfr. #:

NTH4L060N065SC1

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS TO247-4L 650V

Datasheet:

NTH4L060N065SC1 Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package / Case:	TO-247-4
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	33 A
Rds On - Drain-Source Resistance:	70 mOhms
Vgs - Gate-Source Voltage:	- 18 V, + 18 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	74 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	88 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	11 ns
Forward Transconductance - Min:	12 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	14 ns
Series:	NTH4L060N065SC1
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	24 ns
Typical Turn-On Delay Time:	11 ns

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Datasheet

NTH4L060N065SC1 Datasheet (PDF)

PCN

Product Change Notification (PDF)

Material Composition Disclosure

Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

650V Silicon Carbide (SiC) MOSFETs

onsemi 650V Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability compared to Silicon (Si). These 650V SiC MOSFETs have low ON resistance and a compact chip size to ensure low capacitance and gate charge. Benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low R_DS(on), and high short circuit withstand time (SCWT).