Results: 6
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Packaging
onsemi MOSFET Modules Silicon Carbide (SiC) Module EliteSiC, 11 mohm SiC M3S MOSFET, 1200 V, new Tim, 4-PACK Full Bridge Topology, F2 Package
20Expected 11/24/2026
A tariff of 17% may be applied if shipping to the United States.
Min.: 1
Mult.: 1
Max.: 2

SiC Press Fit N-Channel 4 Channel 1.2 kV 105 A 16 mOhms - 10 V, + 22 V 4.4 V - 40 C + 175 C 244 W Tray
onsemi MOSFET Modules Silicon Carbide (SiC) Module, 11 mohm SiC M3S MOSFET, 1200 V, new TIM, TNPC Topology in F2 Package
20Expected 11/24/2026
A tariff of 17% may be applied if shipping to the United States.
Min.: 1
Mult.: 1
Max.: 2

SiC Press Fit N-Channel 4 Channel 1.2 kV 91 A 16 mOhms - 10 V, + 22 V 4.4 V - 40 C + 175 C 272 W Tray
onsemi MOSFET Modules 15 mohm SiC M3S MOSFET, 1200 V, new TIM, 4-PACK Full Bridge Topology,F1Package
28Expected 10/13/2026
A tariff of 17% may be applied if shipping to the United States.
Min.: 1
Mult.: 1
Max.: 3

SiC Press Fit N-Channel 4 Channel 1.2 kV 77 A 19 mOhms - 10 V, + 22 V 4.4 V - 40 C + 175 C 198 W Tray
onsemi MOSFET Modules EliteSiC, 6 m , 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F1 Package
28Expected 2/16/2027
A tariff of 17% may be applied if shipping to the United States.
Min.: 1
Mult.: 1
Max.: 3

SiC Press Fit N-Channel 2 Channel 1.2 kV 200 A 9 mOhms - 10 V, + 22 V 4.4 V - 40 C + 175 C 333 W Tray
onsemi MOSFET Modules EliteSiC, 6 m , 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F1 Package
28Expected 2/16/2027
A tariff of 17% may be applied if shipping to the United States.
Min.: 1
Mult.: 1
Max.: 3

SiC Press Fit N-Channel 2 Channel 1.2 kV 240 A 9 mOhms - 10 V, + 22 V 4.4 V - 40 C + 175 C 500 W Tray
onsemi MOSFET Modules EliteSiC, 8 m , 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F1 Package
28Expected 2/16/2027
A tariff of 17% may be applied if shipping to the United States.
Min.: 1
Mult.: 1
Max.: 3

SiC Press Fit N-Channel 2 Channel 1.2 kV 145 A 10.9 mOhms - 10 V, + 22 V 4.4 V - 40 C + 175 C 382 W Tray