|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD50R500CEAUMA1
- Infineon Technologies
-
1:
$1.57
-
Se puede aplicar una tarifa de 38 % si el envío es a los Estados Unidos.
-
22,500En existencias
-
2,500Se espera el 07/29/2026
-
NRND
|
N.º de artículo de Mouser
726-IPD50R500CEAUMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
22,500En existencias
2,500Se espera el 07/29/2026
|
|
|
$1.57
|
|
|
$1.05
|
|
|
$0.687
|
|
|
$0.54
|
|
|
$0.462
|
|
|
$0.351
|
Se puede aplicar una tarifa de 38 % si el envío es a los Estados Unidos.
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
500 V
|
7.6 A
|
500 mOhms
|
- 20 V, 20 V
|
3 V
|
18.7 nC
|
- 55 C
|
+ 150 C
|
57 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD50R950CEAUMA1
- Infineon Technologies
-
1:
$1.22
-
4,487En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPD50R950CEAUMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
4,487En existencias
|
|
|
$1.22
|
|
|
$0.869
|
|
|
$0.541
|
|
|
$0.373
|
|
|
$0.23
|
|
|
Ver
|
|
|
$0.314
|
|
|
$0.227
|
|
|
$0.211
|
|
|
$0.204
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
500 V
|
6.6 A
|
2.25 Ohms
|
- 20 V, 20 V
|
3 V
|
10.5 nC
|
- 55 C
|
+ 150 C
|
53 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD50R280CEAUMA1
- Infineon Technologies
-
1:
$2.31
-
5,473En existencias
-
7,500Se espera el 08/17/2026
|
N.º de artículo de Mouser
726-IPD50R280CEAUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
5,473En existencias
7,500Se espera el 08/17/2026
|
|
|
$2.31
|
|
|
$1.45
|
|
|
$0.953
|
|
|
$0.756
|
|
|
$0.587
|
|
|
Ver
|
|
|
$0.692
|
|
|
$0.576
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
500 V
|
18.1 A
|
280 mOhms
|
- 20 V, 20 V
|
3 V
|
32.6 nC
|
- 55 C
|
+ 150 C
|
119 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA50R800CEXKSA2
- Infineon Technologies
-
1:
$1.53
-
1,509En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPA50R800CEXKSA2
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
1,509En existencias
|
|
|
$1.53
|
|
|
$0.941
|
|
|
$0.62
|
|
|
$0.487
|
|
|
Ver
|
|
|
$0.416
|
|
|
$0.348
|
|
|
$0.317
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
7.6 A
|
720 mOhms
|
- 20 V, 20 V
|
2.5 V
|
12.4 nC
|
- 40 C
|
+ 150 C
|
26.4 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA50R950CEXKSA2
- Infineon Technologies
-
1:
$1.49
-
Se puede aplicar una tarifa de 10 % si el envío es a los Estados Unidos.
-
998En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPA50R950CEXKSA2
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
998En existencias
|
|
|
$1.49
|
|
|
$0.916
|
|
|
$0.604
|
|
|
$0.474
|
|
|
Ver
|
|
|
$0.369
|
|
|
$0.339
|
|
|
$0.309
|
Se puede aplicar una tarifa de 10 % si el envío es a los Estados Unidos.
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
550 V
|
6.6 A
|
2.22 Ohms
|
- 20 V, 20 V
|
3 V
|
10.5 nC
|
- 40 C
|
+ 150 C
|
25.7 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA50R500CEXKSA2
- Infineon Technologies
-
1:
$1.99
-
922En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-IPA50R500CEXKSA2
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
922En existencias
|
|
|
$1.99
|
|
|
$1.23
|
|
|
$0.809
|
|
|
$0.635
|
|
|
Ver
|
|
|
$0.495
|
|
|
$0.455
|
|
|
$0.414
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
11.1 A
|
1.17 Ohms
|
- 20 V, 20 V
|
3 V
|
18.7 nC
|
- 40 C
|
+ 150 C
|
28 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA50R380CE
- Infineon Technologies
-
1:
$1.77
-
658En existencias
|
N.º de artículo de Mouser
726-IPA50R380CE
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
658En existencias
|
|
|
$1.77
|
|
|
$1.11
|
|
|
$0.728
|
|
|
$0.576
|
|
|
Ver
|
|
|
$0.512
|
|
|
$0.468
|
|
|
$0.45
|
|
|
$0.437
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
14.1 A
|
340 mOhms
|
- 20 V, 20 V
|
2.5 V
|
24.8 nC
|
- 40 C
|
+ 150 C
|
29.2 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA50R380CEXKSA2
- Infineon Technologies
-
1:
$1.85
-
1,475En existencias
|
N.º de artículo de Mouser
726-IPA50R380CEXKSA2
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
1,475En existencias
|
|
|
$1.85
|
|
|
$1.16
|
|
|
$0.761
|
|
|
$0.592
|
|
|
Ver
|
|
|
$0.522
|
|
|
$0.48
|
|
|
$0.46
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
14.1 A
|
340 mOhms
|
- 20 V, 20 V
|
2.5 V
|
24.8 nC
|
- 40 C
|
+ 150 C
|
29.2 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD50R380CEAUMA1
- Infineon Technologies
-
1:
$1.75
-
2,908En existencias
|
N.º de artículo de Mouser
726-IPD50R380CEAUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
2,908En existencias
|
|
|
$1.75
|
|
|
$1.10
|
|
|
$0.721
|
|
|
$0.572
|
|
|
$0.445
|
|
|
Ver
|
|
|
$0.525
|
|
|
$0.436
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
500 V
|
14.1 A
|
380 mOhms
|
- 20 V, 20 V
|
3 V
|
24.8 nC
|
- 55 C
|
+ 150 C
|
98 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA50R800CE
- Infineon Technologies
-
1:
$1.52
-
239En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPA50R800CE
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
239En existencias
|
|
|
$1.52
|
|
|
$0.94
|
|
|
$0.619
|
|
|
$0.487
|
|
|
Ver
|
|
|
$0.416
|
|
|
$0.377
|
|
|
$0.334
|
|
|
$0.323
|
|
|
$0.32
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
7.6 A
|
720 mOhms
|
- 20 V, 20 V
|
2.5 V
|
12.4 nC
|
- 40 C
|
+ 150 C
|
26.4 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA50R280CEXKSA2
- Infineon Technologies
-
1:
$2.02
-
2,390En existencias
-
1,500Se espera el 07/28/2026
|
N.º de artículo de Mouser
726-IPA50R280CEXKSA2
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
2,390En existencias
1,500Se espera el 07/28/2026
|
|
|
$2.02
|
|
|
$1.27
|
|
|
$0.835
|
|
|
$0.661
|
|
|
Ver
|
|
|
$0.588
|
|
|
$0.537
|
|
|
$0.516
|
|
|
$0.505
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
18.1 A
|
280 mOhms
|
- 20 V, 20 V
|
3.5 V
|
32.6 nC
|
- 40 C
|
+ 150 C
|
30.4 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPN50R1K4CEATMA1
- Infineon Technologies
-
1:
$0.92
-
3,109En existencias
|
N.º de artículo de Mouser
726-IPN50R1K4CEATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
3,109En existencias
|
|
|
$0.92
|
|
|
$0.635
|
|
|
$0.398
|
|
|
$0.28
|
|
|
$0.209
|
|
|
Ver
|
|
|
$0.247
|
|
|
$0.185
|
|
|
$0.173
|
|
|
$0.156
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
500 V
|
3.1 A
|
3.28 Ohms
|
- 20 V, 20 V
|
2.5 V
|
8.2 nC
|
- 40 C
|
+ 150 C
|
5 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPN50R2K0CEATMA1
- Infineon Technologies
-
1:
$1.29
-
2,712En existencias
-
6,000Se espera el 07/08/2027
|
N.º de artículo de Mouser
726-IPN50R2K0CEATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
2,712En existencias
6,000Se espera el 07/08/2027
|
|
|
$1.29
|
|
|
$0.893
|
|
|
$0.566
|
|
|
$0.35
|
|
|
$0.223
|
|
|
Ver
|
|
|
$0.263
|
|
|
$0.197
|
|
|
$0.173
|
|
|
$0.133
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
500 V
|
2.4 A
|
4.68 Ohms
|
- 20 V, 20 V
|
2.5 V
|
6 nC
|
- 40 C
|
+ 150 C
|
5 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD50R2K0CEAUMA1
- Infineon Technologies
-
1:
$0.97
-
325En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPD50R2K0CEAUMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
325En existencias
|
|
|
$0.97
|
|
|
$0.686
|
|
|
$0.427
|
|
|
$0.295
|
|
|
$0.215
|
|
|
Ver
|
|
|
$0.253
|
|
|
$0.191
|
|
|
$0.176
|
|
|
$0.161
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
500 V
|
3.6 A
|
2 Ohms
|
- 20 V, 20 V
|
3 V
|
6 nC
|
- 55 C
|
+ 150 C
|
33 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD50R3K0CEAUMA1
- Infineon Technologies
-
1:
$0.74
-
2,422En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-IPD50R3K0CEAUMA1
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
2,422En existencias
|
|
|
$0.74
|
|
|
$0.535
|
|
|
$0.347
|
|
|
$0.252
|
|
|
$0.19
|
|
|
Ver
|
|
|
$0.225
|
|
|
$0.175
|
|
|
$0.166
|
|
|
$0.151
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
500 V
|
2.6 A
|
3 Ohms
|
- 20 V, 20 V
|
3 V
|
4.3 nC
|
- 55 C
|
+ 150 C
|
26 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA50R190CEXKSA2
- Infineon Technologies
-
1:
$2.92
-
4,500En pedido
|
N.º de artículo de Mouser
726-IPA50R190CEXKSA2
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
4,500En pedido
En pedido:
2,000 Se espera el 09/16/2026
2,500 Se espera el 12/03/2026
Plazo de entrega de fábrica:
17 Semanas
|
|
|
$2.92
|
|
|
$1.89
|
|
|
$1.30
|
|
|
$1.04
|
|
|
Ver
|
|
|
$0.974
|
|
|
$0.94
|
|
|
$0.922
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
24.8 A
|
450 mOhms
|
- 20 V, 20 V
|
3 V
|
47.2 nC
|
- 40 C
|
+ 150 C
|
32 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 18.5A TO220-3
- IPP50R190CE
- Infineon Technologies
-
1:
$2.91
-
500Se espera el 07/28/2026
|
N.º de artículo de Mouser
726-IPP50R190CE
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 18.5A TO220-3
|
|
500Se espera el 07/28/2026
|
|
|
$2.91
|
|
|
$1.88
|
|
|
$1.29
|
|
|
$1.04
|
|
|
Ver
|
|
|
$0.974
|
|
|
$0.94
|
|
|
$0.91
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
24.8 A
|
190 mOhms
|
- 20 V, 20 V
|
2.5 V
|
47.2 nC
|
- 55 C
|
+ 150 C
|
152 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 18.5A TO220-3
- IPP50R190CEXKSA1
- Infineon Technologies
-
1:
$2.92
-
995Se espera el 07/27/2026
|
N.º de artículo de Mouser
726-IPP50R190CEXKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 18.5A TO220-3
|
|
995Se espera el 07/27/2026
|
|
|
$2.92
|
|
|
$1.89
|
|
|
$1.30
|
|
|
$1.04
|
|
|
Ver
|
|
|
$0.953
|
|
|
$0.927
|
|
|
$0.922
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
24.8 A
|
170 mOhms
|
- 20 V, 20 V
|
2.5 V
|
47.2 nC
|
- 55 C
|
+ 150 C
|
152 W
|
Enhancement
|
CoolMOS
|
Tube
|
|