|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPZA65R029CFD7XKSA1
- Infineon Technologies
-
1:
$15.56
-
211En existencias
|
N.º de artículo de Mouser
726-IPZA65R029CFD7XK
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
211En existencias
|
|
|
$15.56
|
|
|
$11.85
|
|
|
$9.88
|
|
|
$8.79
|
|
|
Ver
|
|
|
$8.33
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
69 A
|
29 mOhms
|
- 20 V, 20 V
|
4.5 V
|
145 nC
|
- 55 C
|
+ 150 C
|
305 W
|
Enhancement
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW65R029CFD7XKSA1
- Infineon Technologies
-
1:
$14.62
-
136En existencias
|
N.º de artículo de Mouser
726-IPW65R029CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
136En existencias
|
|
|
$14.62
|
|
|
$9.40
|
|
|
$8.38
|
|
|
$8.08
|
|
|
$7.91
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
700 V
|
69 A
|
29 mOhms
|
- 20 V, 20 V
|
4.5 V
|
145 nC
|
- 55 C
|
+ 150 C
|
305 W
|
Enhancement
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW65R060CFD7XKSA1
- Infineon Technologies
-
1:
$9.18
-
268En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPW65R060CFD7SA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
268En existencias
|
|
|
$9.18
|
|
|
$6.47
|
|
|
$4.56
|
|
|
$4.44
|
|
|
$4.16
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
36 A
|
60 mOhms
|
- 10 V, 10 V
|
3.5 V
|
68 nC
|
- 55 C
|
+ 150 C
|
171 W
|
Enhancement
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW65R041CFD7XKSA1
- Infineon Technologies
-
1:
$11.04
-
402En existencias
|
N.º de artículo de Mouser
726-IPW65R041CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
402En existencias
|
|
|
$11.04
|
|
|
$7.80
|
|
|
$6.50
|
|
|
$5.60
|
|
|
$5.48
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
700 V
|
68.5 A
|
41 mOhms
|
- 20 V, 20 V
|
4 V
|
102 nC
|
- 55 C
|
+ 150 C
|
500 W
|
Enhancement
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP65R041CFD7XKSA1
- Infineon Technologies
-
1:
$9.98
-
300En existencias
|
N.º de artículo de Mouser
726-IPP65R041CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
300En existencias
|
|
|
$9.98
|
|
|
$6.82
|
|
|
$5.71
|
|
|
$4.85
|
|
|
$4.74
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
|
N-Channel
|
1 Channel
|
650 V
|
50 A
|
41 mOhms
|
- 20 V, 20 V
|
4.5 V
|
102 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP65R060CFD7XKSA1
- Infineon Technologies
-
1:
$8.15
-
138En existencias
|
N.º de artículo de Mouser
726-IPP65R060CFD7SA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
138En existencias
|
|
|
$8.15
|
|
|
$5.74
|
|
|
$4.68
|
|
|
$3.97
|
|
|
$3.69
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
36 A
|
60 mOhms
|
- 10 V, 10 V
|
4.5 V
|
68 nC
|
- 55 C
|
+ 150 C
|
171 W
|
Enhancement
|
Tube
|
|
Puerto Rico