|
|
MOSFETs de SiC SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
$21.82
-
736En existencias
-
NRND
|
N.º de artículo de Mouser
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
|
MOSFETs de SiC SIC_DISCRETE
|
|
736En existencias
|
|
|
$21.82
|
|
|
$16.24
|
|
|
$16.10
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
59 mOhms
|
- 7 V, + 20 V
|
5.7 V
|
57 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
$5.34
-
6,783En existencias
-
4,000Se espera el 01/07/2027
|
N.º de artículo de Mouser
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
6,783En existencias
4,000Se espera el 01/07/2027
|
|
|
$5.34
|
|
|
$3.55
|
|
|
$2.53
|
|
|
$2.24
|
|
|
$2.09
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
|
4.5 V
|
5 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
$7.36
-
285En existencias
-
NRND
|
N.º de artículo de Mouser
726-IMW120R140M1HXKS
NRND
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
285En existencias
|
|
|
$7.36
|
|
|
$4.67
|
|
|
$3.92
|
|
|
$3.63
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
$15.12
-
1,221En existencias
-
NRND
|
N.º de artículo de Mouser
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
MOSFETs de SiC SILICON CARBIDE MOSFET
|
|
1,221En existencias
|
|
|
$15.12
|
|
|
$9.51
|
|
|
$8.57
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
$11.00
-
42En existencias
-
240Se espera el 08/24/2026
-
NRND
|
N.º de artículo de Mouser
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
MOSFETs de SiC SILICON CARBIDE MOSFET
|
|
42En existencias
240Se espera el 08/24/2026
|
|
|
$11.00
|
|
|
$6.92
|
|
|
$6.15
|
|
|
$5.61
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
$16.08
-
2,160En pedido
-
NRND
|
N.º de artículo de Mouser
726-IMZ120R030M1HXKS
NRND
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
2,160En pedido
En pedido:
720 Se espera el 09/17/2026
Plazo de entrega de fábrica:
52 Semanas
|
|
|
$16.08
|
|
|
$10.43
|
|
|
$9.56
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
$9.09
-
Plazo de entrega no en existencias 52 Semanas
-
NRND
|
N.º de artículo de Mouser
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
MOSFETs de SiC SILICON CARBIDE MOSFET
|
|
Plazo de entrega no en existencias 52 Semanas
|
|
|
$9.09
|
|
|
$5.31
|
|
|
$4.48
|
|
|
$4.25
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
Puerto Rico