|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPA60R120P7XKSA1
- Infineon Technologies
-
1:
$4.43
-
1,873En existencias
|
N.º de artículo de Mouser
726-IPA60R120P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,873En existencias
|
|
|
$4.43
|
|
|
$2.27
|
|
|
$2.06
|
|
|
$1.68
|
|
|
$1.63
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
100 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 55 C
|
+ 150 C
|
28 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R045P7ATMA1
- Infineon Technologies
-
1:
$8.37
-
732En existencias
-
4,000En pedido
|
N.º de artículo de Mouser
726-IPB60R045P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
732En existencias
4,000En pedido
Existencias:
732 Se puede enviar inmediatamente
En pedido:
2,000 Se espera el 08/27/2026
2,000 Se espera el 09/03/2026
Plazo de entrega de fábrica:
19 Semanas
|
|
|
$8.37
|
|
|
$5.60
|
|
|
$3.84
|
|
|
$3.63
|
|
|
$3.58
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
120 V
|
61 A
|
45 mOhms
|
- 20 V, 20 V
|
1.7 V
|
90 nC
|
- 55 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R060P7ATMA1
- Infineon Technologies
-
1:
$6.41
-
1,296En existencias
|
N.º de artículo de Mouser
726-IPB60R060P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,296En existencias
|
|
|
$6.41
|
|
|
$4.38
|
|
|
$3.21
|
|
|
$2.99
|
|
|
$2.82
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
164 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R099P7ATMA1
- Infineon Technologies
-
1:
$5.13
-
1,202En existencias
|
N.º de artículo de Mouser
726-IPB60R099P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,202En existencias
|
|
|
$5.13
|
|
|
$3.40
|
|
|
$2.42
|
|
|
$2.12
|
|
|
$1.98
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
117 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R120P7ATMA1
- Infineon Technologies
-
1:
$4.43
-
5,255En existencias
|
N.º de artículo de Mouser
726-IPB60R120P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
5,255En existencias
|
|
|
$4.43
|
|
|
$2.92
|
|
|
$2.06
|
|
|
$1.74
|
|
|
$1.73
|
|
|
$1.63
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
100 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 55 C
|
+ 150 C
|
95 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPD60R180P7ATMA1
- Infineon Technologies
-
1:
$2.88
-
2,294En existencias
-
12,500Se espera el 10/29/2026
|
N.º de artículo de Mouser
726-IPD60R180P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
2,294En existencias
12,500Se espera el 10/29/2026
|
|
|
$2.88
|
|
|
$1.87
|
|
|
$1.29
|
|
|
$1.04
|
|
|
$0.953
|
|
|
$0.918
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
180 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD60R180P7SAUMA1
- Infineon Technologies
-
1:
$2.20
-
11,346En existencias
-
7,500Se espera el 01/28/2027
|
N.º de artículo de Mouser
726-IPD60R180P7SAUMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
11,346En existencias
7,500Se espera el 01/28/2027
|
|
|
$2.20
|
|
|
$1.41
|
|
|
$0.953
|
|
|
$0.758
|
|
|
$0.658
|
|
|
Ver
|
|
|
$0.695
|
|
|
$0.625
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
180 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 40 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD60R280P7SAUMA1
- Infineon Technologies
-
1:
$1.94
-
Se puede aplicar una tarifa de 38 % si el envío es a los Estados Unidos.
-
3,200En existencias
|
N.º de artículo de Mouser
726-IPD60R280P7SAUMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
3,200En existencias
|
|
|
$1.94
|
|
|
$1.22
|
|
|
$0.798
|
|
|
$0.633
|
|
|
$0.513
|
|
|
Ver
|
|
|
$0.563
|
|
|
$0.482
|
Se puede aplicar una tarifa de 38 % si el envío es a los Estados Unidos.
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
12 A
|
214 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 40 C
|
+ 150 C
|
53 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD60R600P7SAUMA1
- Infineon Technologies
-
1:
$1.24
-
7,639En existencias
|
N.º de artículo de Mouser
726-IPD60R600P7SAUMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
7,639En existencias
|
|
|
$1.24
|
|
|
$0.78
|
|
|
$0.513
|
|
|
$0.398
|
|
|
$0.32
|
|
|
Ver
|
|
|
$0.361
|
|
|
$0.286
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
6 A
|
600 mOhms
|
- 20 V, 20 V
|
3.5 V
|
9 nC
|
- 40 C
|
+ 150 C
|
30 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD70R1K4P7SAUMA1
- Infineon Technologies
-
1:
$1.05
-
17,931En existencias
-
15,000Se espera el 12/28/2026
|
N.º de artículo de Mouser
726-IPD70R1K4P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
17,931En existencias
15,000Se espera el 12/28/2026
|
|
|
$1.05
|
|
|
$0.654
|
|
|
$0.427
|
|
|
$0.329
|
|
|
$0.261
|
|
|
Ver
|
|
|
$0.297
|
|
|
$0.23
|
|
|
$0.226
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
700 V
|
4 A
|
1.15 Ohms
|
- 16 V, 16 V
|
2.5 V
|
4.7 nC
|
- 40 C
|
+ 150 C
|
22.7 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD70R900P7SAUMA1
- Infineon Technologies
-
1:
$1.12
-
16,028En existencias
|
N.º de artículo de Mouser
726-IPD70R900P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
16,028En existencias
|
|
|
$1.12
|
|
|
$0.702
|
|
|
$0.46
|
|
|
$0.355
|
|
|
$0.284
|
|
|
Ver
|
|
|
$0.321
|
|
|
$0.264
|
|
|
$0.253
|
|
|
$0.246
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
700 V
|
6 A
|
740 mOhms
|
- 16 V, 16 V
|
2.5 V
|
6.8 nC
|
- 40 C
|
+ 150 C
|
30.5 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R280P7ATMA1
- Infineon Technologies
-
1:
$3.67
-
8,939En existencias
|
N.º de artículo de Mouser
726-IPD80R280P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
8,939En existencias
|
|
|
$3.67
|
|
|
$2.46
|
|
|
$1.86
|
|
|
$1.54
|
|
|
$1.44
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
17 A
|
280 mOhms
|
- 30 V, 30 V
|
3 V
|
36 nC
|
- 50 C
|
+ 150 C
|
101 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R2K4P7ATMA1
- Infineon Technologies
-
1:
$1.39
-
9,148En existencias
|
N.º de artículo de Mouser
726-IPD80R2K4P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
9,148En existencias
|
|
|
$1.39
|
|
|
$0.877
|
|
|
$0.58
|
|
|
$0.452
|
|
|
$0.365
|
|
|
Ver
|
|
|
$0.411
|
|
|
$0.354
|
|
|
$0.332
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
2.5 A
|
2 Ohms
|
- 20 V, 20 V
|
2.5 V
|
7.5 nC
|
- 55 C
|
+ 150 C
|
22 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R900P7ATMA1
- Infineon Technologies
-
1:
$2.01
-
7,500En existencias
|
N.º de artículo de Mouser
726-IPD80R900P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
7,500En existencias
|
|
|
$2.01
|
|
|
$1.29
|
|
|
$0.863
|
|
|
$0.684
|
|
|
$0.626
|
|
|
$0.559
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
770 mOhms
|
- 20 V, 20 V
|
2.5 V
|
15 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD95R2K0P7ATMA1
- Infineon Technologies
-
1:
$1.83
-
12,672En existencias
|
N.º de artículo de Mouser
726-IPD95R2K0P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
12,672En existencias
|
|
|
$1.83
|
|
|
$1.17
|
|
|
$0.78
|
|
|
$0.616
|
|
|
$0.504
|
|
|
Ver
|
|
|
$0.563
|
|
|
$0.492
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
950 V
|
4 A
|
2 Ohms
|
- 20 V, 20 V
|
2.5 V
|
10 nC
|
- 55 C
|
+ 150 C
|
37 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD95R750P7ATMA1
- Infineon Technologies
-
1:
$2.78
-
3,049En existencias
-
2,500Se espera el 10/01/2026
|
N.º de artículo de Mouser
726-IPD95R750P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
3,049En existencias
2,500Se espera el 10/01/2026
|
|
|
$2.78
|
|
|
$1.79
|
|
|
$1.22
|
|
|
$1.03
|
|
|
$0.841
|
|
|
Ver
|
|
|
$0.912
|
|
|
$0.829
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
950 V
|
9 A
|
750 mOhms
|
- 20 V, 20 V
|
2.5 V
|
23 nC
|
- 55 C
|
+ 150 C
|
73 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R125P7AUMA1
- Infineon Technologies
-
1:
$4.14
-
7,614En existencias
-
3,000Se espera el 06/17/2027
|
N.º de artículo de Mouser
726-IPL60R125P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
7,614En existencias
3,000Se espera el 06/17/2027
|
|
|
$4.14
|
|
|
$2.78
|
|
|
$2.02
|
|
|
$1.71
|
|
|
$1.67
|
|
|
$1.61
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
27 A
|
104 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 40 C
|
+ 150 C
|
111 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R185P7AUMA1
- Infineon Technologies
-
1:
$3.29
-
3,692En existencias
|
N.º de artículo de Mouser
726-IPL60R185P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
3,692En existencias
|
|
|
$3.29
|
|
|
$2.14
|
|
|
$1.48
|
|
|
$1.20
|
|
|
$1.16
|
|
|
$1.09
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
19 A
|
149 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 40 C
|
+ 150 C
|
81 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R285P7AUMA1
- Infineon Technologies
-
1:
$3.10
-
3,752En existencias
|
N.º de artículo de Mouser
726-IPL60R285P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
3,752En existencias
|
|
|
$3.10
|
|
|
$2.01
|
|
|
$1.39
|
|
|
$1.12
|
|
|
$1.07
|
|
|
$1.00
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
218 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 40 C
|
+ 150 C
|
59 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPN70R600P7SATMA1
- Infineon Technologies
-
1:
$1.30
-
4,823En existencias
|
N.º de artículo de Mouser
726-IPN70R600P7SATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
4,823En existencias
|
|
|
$1.30
|
|
|
$0.818
|
|
|
$0.539
|
|
|
$0.419
|
|
|
$0.33
|
|
|
Ver
|
|
|
$0.38
|
|
|
$0.302
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
700 V
|
8.5 A
|
490 mOhms
|
- 16 V, 16 V
|
2.5 V
|
10.5 nC
|
- 40 C
|
+ 150 C
|
6.9 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPN80R2K4P7ATMA1
- Infineon Technologies
-
1:
$1.29
-
9,743En existencias
|
N.º de artículo de Mouser
726-IPN80R2K4P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
9,743En existencias
|
|
|
$1.29
|
|
|
$0.812
|
|
|
$0.535
|
|
|
$0.416
|
|
|
$0.36
|
|
|
Ver
|
|
|
$0.377
|
|
|
$0.319
|
|
|
$0.308
|
|
|
$0.299
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
800 V
|
2.5 A
|
2 Ohms
|
- 30 V, 30 V
|
3.5 V
|
7.5 nC
|
- 55 C
|
+ 150 C
|
500 mW
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPN95R1K2P7ATMA1
- Infineon Technologies
-
1:
$1.91
-
5,876En existencias
|
N.º de artículo de Mouser
726-IPN95R1K2P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
5,876En existencias
|
|
|
$1.91
|
|
|
$1.22
|
|
|
$0.817
|
|
|
$0.645
|
|
|
$0.52
|
|
|
Ver
|
|
|
$0.59
|
|
|
$0.514
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
950 V
|
6 A
|
1.2 Ohms
|
- 20 V, 20 V
|
2.5 V
|
15 nC
|
- 55 C
|
+ 150 C
|
7 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R024P7XKSA1
- Infineon Technologies
-
1:
$14.15
-
289En existencias
-
720Se espera el 08/27/2026
|
N.º de artículo de Mouser
726-IPW60R024P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
289En existencias
720Se espera el 08/27/2026
|
|
|
$14.15
|
|
|
$8.58
|
|
|
$7.60
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
101 A
|
24 mOhms
|
- 20 V, 20 V
|
3.5 V
|
164 nC
|
- 55 C
|
+ 150 C
|
291 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R080P7XKSA1
- Infineon Technologies
-
1:
$7.06
-
3,520En existencias
|
N.º de artículo de Mouser
726-IPW60R080P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
3,520En existencias
|
|
|
$7.06
|
|
|
$4.04
|
|
|
$3.38
|
|
|
$3.04
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
129 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R099P7XKSA1
- Infineon Technologies
-
1:
$5.64
-
652En existencias
|
N.º de artículo de Mouser
726-IPW60R099P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
652En existencias
|
|
|
$5.64
|
|
|
$3.30
|
|
|
$2.74
|
|
|
$2.53
|
|
|
$2.39
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
117 W
|
Enhancement
|
CoolMOS
|
Tube
|
|