|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD95R1K2P7ATMA1
- Infineon Technologies
-
1:
$2.19
-
1,368En existencias
-
2,500Se espera el 10/08/2026
|
N.º de artículo de Mouser
726-IPD95R1K2P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
1,368En existencias
2,500Se espera el 10/08/2026
|
|
|
$2.19
|
|
|
$1.06
|
|
|
$0.943
|
|
|
$0.749
|
|
|
$0.717
|
|
|
$0.618
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
950 V
|
6 A
|
1.2 Ohms
|
20 V
|
2.5 V
|
15 nC
|
- 55 C
|
+ 150 C
|
52 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD95R2K0P7ATMA1
- Infineon Technologies
-
1:
$1.94
-
12,647En existencias
|
N.º de artículo de Mouser
726-IPD95R2K0P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
12,647En existencias
|
|
|
$1.94
|
|
|
$0.926
|
|
|
$0.813
|
|
|
$0.645
|
|
|
$0.523
|
|
|
Ver
|
|
|
$0.59
|
|
|
$0.492
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
950 V
|
4 A
|
2 Ohms
|
20 V
|
2.5 V
|
10 nC
|
- 55 C
|
+ 150 C
|
37 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD95R750P7ATMA1
- Infineon Technologies
-
1:
$2.78
-
2,960En existencias
-
2,500Se espera el 10/08/2026
|
N.º de artículo de Mouser
726-IPD95R750P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
2,960En existencias
2,500Se espera el 10/08/2026
|
|
|
$2.78
|
|
|
$1.58
|
|
|
$1.22
|
|
|
$1.03
|
|
|
$0.841
|
|
|
Ver
|
|
|
$0.966
|
|
|
$0.829
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
950 V
|
9 A
|
750 mOhms
|
20 V
|
2.5 V
|
23 nC
|
- 55 C
|
+ 150 C
|
73 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPN95R1K2P7ATMA1
- Infineon Technologies
-
1:
$1.91
-
5,766En existencias
|
N.º de artículo de Mouser
726-IPN95R1K2P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
5,766En existencias
|
|
|
$1.91
|
|
|
$1.22
|
|
|
$0.817
|
|
|
$0.645
|
|
|
$0.52
|
|
|
Ver
|
|
|
$0.59
|
|
|
$0.514
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
950 V
|
6 A
|
1.2 Ohms
|
20 V
|
2.5 V
|
15 nC
|
- 55 C
|
+ 150 C
|
7 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPN95R3K7P7ATMA1
- Infineon Technologies
-
1:
$1.48
-
9,364En existencias
-
63,000Se espera el 12/24/2026
|
N.º de artículo de Mouser
726-IPN95R3K7P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
9,364En existencias
63,000Se espera el 12/24/2026
|
|
|
$1.48
|
|
|
$0.691
|
|
|
$0.614
|
|
|
$0.479
|
|
|
$0.367
|
|
|
Ver
|
|
|
$0.464
|
|
|
$0.337
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
950 V
|
2 A
|
3.7 Ohms
|
20 V
|
2.5 V
|
6 nC
|
- 55 C
|
+ 150 C
|
6 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA95R1K2P7XKSA1
- Infineon Technologies
-
1:
$2.45
-
179En existencias
-
1,000Se espera el 11/26/2026
|
N.º de artículo de Mouser
726-IPA95R1K2P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
179En existencias
1,000Se espera el 11/26/2026
|
|
|
$2.45
|
|
|
$1.20
|
|
|
$1.07
|
|
|
$0.854
|
|
|
Ver
|
|
|
$0.839
|
|
|
$0.823
|
|
|
$0.821
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
950 V
|
6 A
|
1.2 Ohms
|
20 V
|
2.5 V
|
15 nC
|
- 55 C
|
+ 150 C
|
27 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD95R450P7ATMA1
- Infineon Technologies
-
1:
$3.39
-
5En existencias
-
2,500Se espera el 02/18/2027
|
N.º de artículo de Mouser
726-IPD95R450P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
5En existencias
2,500Se espera el 02/18/2027
|
|
|
$3.39
|
|
|
$1.92
|
|
|
$1.48
|
|
|
$1.22
|
|
|
$1.17
|
|
|
$1.05
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
950 V
|
14 A
|
450 mOhms
|
20 V
|
2.5 V
|
35 nC
|
- 55 C
|
+ 150 C
|
104 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPU95R750P7AKMA1
- Infineon Technologies
-
1:
$2.62
-
Se puede aplicar una tarifa de 38 % si el envío es a los Estados Unidos.
-
2,999En pedido
|
N.º de artículo de Mouser
726-IPU95R750P7AKMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
2,999En pedido
En pedido:
1,499 Se espera el 09/24/2026
1,500 Se espera el 10/08/2026
Plazo de entrega de fábrica:
18 Semanas
|
|
|
$2.62
|
|
|
$1.23
|
|
|
$1.11
|
|
|
$0.938
|
|
|
Ver
|
|
|
$0.918
|
|
|
$0.861
|
Se puede aplicar una tarifa de 38 % si el envío es a los Estados Unidos.
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
950 V
|
9 A
|
750 mOhms
|
20 V
|
2.5 V
|
23 nC
|
- 55 C
|
+ 150 C
|
73 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA95R450P7XKSA1
- Infineon Technologies
-
1:
$3.40
-
Plazo de entrega no en existencias 26 Semanas
|
N.º de artículo de Mouser
726-IPA95R450P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
Plazo de entrega no en existencias 26 Semanas
|
|
|
$3.40
|
|
|
$1.70
|
|
|
$1.54
|
|
|
$1.24
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
950 V
|
14 A
|
450 mOhms
|
20 V
|
2.5 V
|
35 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
CoolMOS
|
Tube
|
|