|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPA60R080P7XKSA1
- Infineon Technologies
-
1:
$5.80
-
2,248En existencias
|
N.º de artículo de Mouser
726-IPA60R080P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
2,248En existencias
|
|
|
$5.80
|
|
|
$3.04
|
|
|
$2.77
|
|
|
$2.36
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R065P7AUMA1
- Infineon Technologies
-
1:
$8.15
-
3,511En existencias
|
N.º de artículo de Mouser
726-IPL60R065P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
3,511En existencias
|
|
|
$8.15
|
|
|
$5.74
|
|
|
$4.64
|
|
|
$4.13
|
|
|
$3.69
|
|
|
$3.19
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
41 A
|
53 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 40 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPZA60R045P7XKSA1
- Infineon Technologies
-
1:
$10.04
-
Se puede aplicar una tarifa de 38 % si el envío es a los Estados Unidos.
-
220En existencias
|
N.º de artículo de Mouser
726-IPZA60R045P7XKSA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
220En existencias
|
|
|
$10.04
|
|
|
$6.86
|
|
|
$5.19
|
|
|
$4.86
|
|
|
Ver
|
|
|
$4.60
|
|
|
Presupuesto
|
Se puede aplicar una tarifa de 38 % si el envío es a los Estados Unidos.
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
61 A
|
45 mOhms
|
- 20 V, 20 V
|
3.5 V
|
90 nC
|
- 55 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R080P7XKSA1
- Infineon Technologies
-
1:
$5.80
-
12,403En existencias
-
25,000En pedido
|
N.º de artículo de Mouser
726-IPP60R080P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
12,403En existencias
25,000En pedido
Existencias:
12,403 Se puede enviar inmediatamente
En pedido:
2,500 Se espera el 09/17/2026
22,500 Se espera el 06/10/2027
Plazo de entrega de fábrica:
20 Semanas
|
|
|
$5.80
|
|
|
$3.04
|
|
|
$2.77
|
|
|
$2.36
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
129 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R037P7XKSA1
- Infineon Technologies
-
1:
$10.73
-
6,668En existencias
-
6,240Se espera el 08/24/2026
|
N.º de artículo de Mouser
726-IPW60R037P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
6,668En existencias
6,240Se espera el 08/24/2026
|
|
|
$10.73
|
|
|
$6.35
|
|
|
$5.39
|
|
|
$5.35
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
76 A
|
30 mOhms
|
- 20 V, 20 V
|
3 V
|
121 nC
|
- 55 C
|
+ 150 C
|
255 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R180P7XKSA1
- Infineon Technologies
-
1:
$4.19
-
24,207En existencias
-
23,760Se espera el 04/29/2027
|
N.º de artículo de Mouser
726-IPW60R180P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
24,207En existencias
23,760Se espera el 04/29/2027
|
|
|
$4.19
|
|
|
$2.74
|
|
|
$2.05
|
|
|
$1.71
|
|
|
Ver
|
|
|
$1.58
|
|
|
$1.50
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R180P7ATMA1
- Infineon Technologies
-
1:
$3.42
-
7,593En existencias
|
N.º de artículo de Mouser
726-IPB60R180P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
7,593En existencias
|
|
|
$3.42
|
|
|
$2.22
|
|
|
$1.53
|
|
|
$1.33
|
|
|
$1.12
|
|
|
$1.11
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R045P7XKSA1
- Infineon Technologies
-
1:
$9.44
-
473En existencias
|
N.º de artículo de Mouser
726-IPW60R045P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
473En existencias
|
|
|
$9.44
|
|
|
$6.45
|
|
|
$5.32
|
|
|
$4.73
|
|
|
$4.48
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
61 A
|
45 mOhms
|
- 20 V, 20 V
|
3.5 V
|
90 nC
|
- 55 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPA60R060P7XKSA1
- Infineon Technologies
-
1:
$7.44
-
3,005En existencias
|
N.º de artículo de Mouser
726-IPA60R060P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
3,005En existencias
|
|
|
$7.44
|
|
|
$4.87
|
|
|
$3.62
|
|
|
$3.07
|
|
|
$2.85
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPA60R099P7XKSA1
- Infineon Technologies
-
1:
$5.58
-
862En existencias
|
N.º de artículo de Mouser
726-IPA60R099P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
862En existencias
|
|
|
$5.58
|
|
|
$3.66
|
|
|
$2.73
|
|
|
$2.28
|
|
|
Ver
|
|
|
$2.04
|
|
|
$2.00
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPA60R120P7XKSA1
- Infineon Technologies
-
1:
$4.43
-
1,853En existencias
|
N.º de artículo de Mouser
726-IPA60R120P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,853En existencias
|
|
|
$4.43
|
|
|
$2.27
|
|
|
$2.06
|
|
|
$1.68
|
|
|
$1.64
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
100 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 55 C
|
+ 150 C
|
28 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R045P7ATMA1
- Infineon Technologies
-
1:
$8.37
-
732En existencias
-
4,000En pedido
|
N.º de artículo de Mouser
726-IPB60R045P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
732En existencias
4,000En pedido
Existencias:
732 Se puede enviar inmediatamente
En pedido:
2,000 Se espera el 08/27/2026
2,000 Se espera el 09/03/2026
Plazo de entrega de fábrica:
19 Semanas
|
|
|
$8.37
|
|
|
$5.60
|
|
|
$3.84
|
|
|
$3.54
|
|
|
$3.54
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
120 V
|
61 A
|
45 mOhms
|
- 20 V, 20 V
|
1.7 V
|
90 nC
|
- 55 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R060P7ATMA1
- Infineon Technologies
-
1:
$6.49
-
1,296En existencias
|
N.º de artículo de Mouser
726-IPB60R060P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,296En existencias
|
|
|
$6.49
|
|
|
$4.45
|
|
|
$3.21
|
|
|
$2.99
|
|
|
$2.82
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
164 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R099P7ATMA1
- Infineon Technologies
-
1:
$5.13
-
1,202En existencias
|
N.º de artículo de Mouser
726-IPB60R099P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,202En existencias
|
|
|
$5.13
|
|
|
$3.40
|
|
|
$2.42
|
|
|
$2.12
|
|
|
$2.00
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
117 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R120P7ATMA1
- Infineon Technologies
-
1:
$4.58
-
5,275En existencias
|
N.º de artículo de Mouser
726-IPB60R120P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
5,275En existencias
|
|
|
$4.58
|
|
|
$3.00
|
|
|
$2.24
|
|
|
$1.95
|
|
|
$1.65
|
|
|
$1.64
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
100 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 55 C
|
+ 150 C
|
95 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPD60R180P7ATMA1
- Infineon Technologies
-
1:
$2.91
-
2,294En existencias
-
12,500Se espera el 10/29/2026
|
N.º de artículo de Mouser
726-IPD60R180P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
2,294En existencias
12,500Se espera el 10/29/2026
|
|
|
$2.91
|
|
|
$1.88
|
|
|
$1.29
|
|
|
$1.05
|
|
|
$0.971
|
|
|
$0.918
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
180 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD60R180P7SAUMA1
- Infineon Technologies
-
1:
$2.20
-
11,514En existencias
-
7,500Se espera el 05/06/2027
|
N.º de artículo de Mouser
726-IPD60R180P7SAUMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
11,514En existencias
7,500Se espera el 05/06/2027
|
|
|
$2.20
|
|
|
$1.41
|
|
|
$0.953
|
|
|
$0.758
|
|
|
$0.658
|
|
|
Ver
|
|
|
$0.695
|
|
|
$0.634
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
180 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 40 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R105P7AUMA1
- Infineon Technologies
-
1:
$5.92
-
542En existencias
-
6,000Se espera el 11/26/2026
|
N.º de artículo de Mouser
726-IPL60R105P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
542En existencias
6,000Se espera el 11/26/2026
|
|
|
$5.92
|
|
|
$3.88
|
|
|
$2.89
|
|
|
$2.43
|
|
|
$2.25
|
|
|
$2.09
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
33 A
|
85 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 40 C
|
+ 150 C
|
137 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R125P7AUMA1
- Infineon Technologies
-
1:
$4.34
-
7,624En existencias
-
3,000Se espera el 12/10/2026
|
N.º de artículo de Mouser
726-IPL60R125P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
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7,624En existencias
3,000Se espera el 12/10/2026
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$4.34
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$2.86
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$2.02
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$1.71
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$1.61
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Min.: 1
Mult.: 1
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3,000
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Si
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SMD/SMT
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VSON-4
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N-Channel
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1 Channel
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600 V
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27 A
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104 mOhms
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- 20 V, 20 V
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3 V
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36 nC
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- 40 C
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+ 150 C
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111 W
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Enhancement
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CoolMOS
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Reel, Cut Tape, MouseReel
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R185P7AUMA1
- Infineon Technologies
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1:
$3.29
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3,692En existencias
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N.º de artículo de Mouser
726-IPL60R185P7AUMA1
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Infineon Technologies
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
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3,692En existencias
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$3.29
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$2.14
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$1.48
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$1.20
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$1.16
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$1.09
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Min.: 1
Mult.: 1
:
3,000
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Si
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SMD/SMT
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VSON-4
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N-Channel
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1 Channel
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600 V
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19 A
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149 mOhms
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- 20 V, 20 V
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3 V
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25 nC
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- 40 C
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+ 150 C
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81 W
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Enhancement
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CoolMOS
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Reel, Cut Tape, MouseReel
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R180P7XKSA1
- Infineon Technologies
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1:
$3.34
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2,164En existencias
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N.º de artículo de Mouser
726-IPP60R180P7XKSA1
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Infineon Technologies
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
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2,164En existencias
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$3.34
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$1.67
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$1.45
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$1.21
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$1.11
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-220-3
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N-Channel
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1 Channel
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600 V
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18 A
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145 mOhms
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- 20 V, 20 V
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3 V
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25 nC
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- 55 C
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+ 150 C
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72 W
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Enhancement
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CoolMOS
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R024P7XKSA1
- Infineon Technologies
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1:
$14.38
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439En existencias
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N.º de artículo de Mouser
726-IPW60R024P7XKSA1
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Infineon Technologies
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
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439En existencias
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$14.38
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$10.05
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$8.55
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$8.12
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$7.60
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-247-3
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N-Channel
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1 Channel
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650 V
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101 A
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24 mOhms
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- 20 V, 20 V
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3.5 V
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164 nC
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- 55 C
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+ 150 C
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291 W
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Enhancement
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CoolMOS
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R080P7XKSA1
- Infineon Technologies
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1:
$7.06
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3,520En existencias
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N.º de artículo de Mouser
726-IPW60R080P7XKSA1
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Infineon Technologies
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
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3,520En existencias
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$7.06
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$4.04
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$3.38
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$3.07
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-247-3
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N-Channel
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1 Channel
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600 V
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37 A
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69 mOhms
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- 20 V, 20 V
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3 V
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51 nC
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- 55 C
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+ 150 C
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129 W
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Enhancement
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CoolMOS
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R099P7XKSA1
- Infineon Technologies
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1:
$6.24
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672En existencias
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N.º de artículo de Mouser
726-IPW60R099P7XKSA1
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Infineon Technologies
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
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672En existencias
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$6.24
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$4.09
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$3.01
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$2.67
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$2.39
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-247-3
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N-Channel
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1 Channel
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600 V
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31 A
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77 mOhms
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- 20 V, 20 V
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3 V
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45 nC
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- 55 C
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+ 150 C
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117 W
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Enhancement
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CoolMOS
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPZA60R037P7XKSA1
- Infineon Technologies
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1:
$12.62
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254En existencias
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N.º de artículo de Mouser
726-IPZA60R037P7XKSA
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Infineon Technologies
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
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254En existencias
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$12.62
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$9.13
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$7.61
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$6.55
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$6.42
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-247-4
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N-Channel
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1 Channel
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600 V
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76 A
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30 mOhms
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- 20 V, 20 V
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3 V
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121 nC
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- 55 C
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+ 150 C
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255 W
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Enhancement
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CoolMOS
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Tube
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