|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
- SPD06N80C3ATMA1
- Infineon Technologies
-
1:
$2.55
-
3,646En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPD06N80C3ATMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
|
|
3,646En existencias
|
|
|
$2.55
|
|
|
$1.64
|
|
|
$1.12
|
|
|
$0.895
|
|
|
$0.823
|
|
|
$0.764
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
900 mOhms
|
- 20 V, 20 V
|
2.1 V
|
31 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 6A TO220FP-3 CoolMOS C3
- SPA06N80C3
- Infineon Technologies
-
1:
$2.77
-
Se puede aplicar una tarifa de 10 % si el envío es a los Estados Unidos.
-
2,241En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-SPA06N80C3
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 6A TO220FP-3 CoolMOS C3
|
|
2,241En existencias
|
|
|
$2.77
|
|
|
$1.79
|
|
|
$1.23
|
|
|
$0.993
|
|
|
Ver
|
|
|
$0.922
|
|
|
$0.89
|
|
|
$0.872
|
|
|
Presupuesto
|
Se puede aplicar una tarifa de 10 % si el envío es a los Estados Unidos.
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
780 mOhms
|
- 20 V, 20 V
|
2.1 V
|
41 nC
|
- 55 C
|
+ 150 C
|
39 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 8A TO220-3 CoolMOS C3
- SPP08N80C3XKSA1
- Infineon Technologies
-
1:
$2.95
-
833En existencias
|
N.º de artículo de Mouser
726-SPP08N80C3XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 8A TO220-3 CoolMOS C3
|
|
833En existencias
|
|
|
$2.95
|
|
|
$1.60
|
|
|
$1.43
|
|
|
$1.18
|
|
|
$1.05
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
8 A
|
560 mOhms
|
- 20 V, 20 V
|
2.1 V
|
60 nC
|
- 55 C
|
+ 150 C
|
104 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
- SPD04N80C3ATMA1
- Infineon Technologies
-
1:
$2.33
-
1,345En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPD04N80C3ATMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
|
|
1,345En existencias
|
|
|
$2.33
|
|
|
$1.23
|
|
|
$0.907
|
|
|
$0.776
|
|
|
$0.726
|
|
|
$0.683
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
4 A
|
1.1 Ohms
|
- 20 V, 20 V
|
2.1 V
|
31 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 850V 54.9A TO247-3
- SPW55N80C3FKSA1
- Infineon Technologies
-
1:
$16.44
-
284En existencias
|
N.º de artículo de Mouser
726-SPW55N80C3FKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 850V 54.9A TO247-3
|
|
284En existencias
|
|
|
$16.44
|
|
|
$10.10
|
|
|
$9.17
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
800 V
|
54.9 A
|
77 mOhms
|
- 20 V, 20 V
|
2.1 V
|
288 nC
|
- 55 C
|
+ 150 C
|
500 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 8A TO220FP-3 CoolMOS C3
- SPA08N80C3XKSA1
- Infineon Technologies
-
1:
$3.47
-
487En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPA08N80C3XKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 8A TO220FP-3 CoolMOS C3
|
|
487En existencias
|
|
|
$3.47
|
|
|
$1.74
|
|
|
$1.57
|
|
|
$1.27
|
|
|
$1.17
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
8 A
|
560 mOhms
|
- 20 V, 20 V
|
2.1 V
|
60 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 17A D2PAK-2 CoolMOS C3
- SPB17N80C3ATMA1
- Infineon Technologies
-
1:
$5.09
-
863En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPB17N80C3ATMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 17A D2PAK-2 CoolMOS C3
|
|
863En existencias
|
|
|
$5.09
|
|
|
$3.38
|
|
|
$2.40
|
|
|
$2.10
|
|
|
$1.98
|
|
|
$1.96
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
800 V
|
17 A
|
250 mOhms
|
- 20 V, 20 V
|
2.1 V
|
117 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
- SPD02N80C3ATMA1
- Infineon Technologies
-
1:
$1.73
-
8,402En existencias
-
35,000Se espera el 04/01/2027
-
NRND
|
N.º de artículo de Mouser
726-SPD02N80C3ATMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
|
|
8,402En existencias
35,000Se espera el 04/01/2027
|
|
|
$1.73
|
|
|
$1.13
|
|
|
$0.751
|
|
|
$0.598
|
|
|
$0.492
|
|
|
Ver
|
|
|
$0.544
|
|
|
$0.473
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
2 A
|
2.7 Ohms
|
- 20 V, 20 V
|
2.1 V
|
12 nC
|
- 55 C
|
+ 150 C
|
42 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 11A TO247-3 CoolMOS C3
- SPW11N80C3FKSA1
- Infineon Technologies
-
1:
$4.35
-
255En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPW11N80C3FKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 11A TO247-3 CoolMOS C3
|
|
255En existencias
|
|
|
$4.35
|
|
|
$2.40
|
|
|
$1.97
|
|
|
$1.64
|
|
|
$1.59
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
800 V
|
11 A
|
390 mOhms
|
- 20 V, 20 V
|
2.1 V
|
85 nC
|
- 55 C
|
+ 150 C
|
156 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 17A TO247-3 CoolMOS C3
- SPW17N80C3
- Infineon Technologies
-
1:
$6.53
-
190En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPW17N80C3
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 17A TO247-3 CoolMOS C3
|
|
190En existencias
|
|
|
$6.53
|
|
|
$4.28
|
|
|
$3.15
|
|
|
$2.79
|
|
|
$2.49
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
800 V
|
17 A
|
290 mOhms
|
- 20 V, 20 V
|
2.1 V
|
88 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 6A TO220FP-3 CoolMOS C3
- SPA06N80C3XKSA1
- Infineon Technologies
-
1:
$2.68
-
387En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-SPA06N80C3XKSA1
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 6A TO220FP-3 CoolMOS C3
|
|
387En existencias
|
|
|
$2.68
|
|
|
$1.33
|
|
|
$1.19
|
|
|
$0.969
|
|
|
Ver
|
|
|
$0.964
|
|
|
$0.93
|
|
|
$0.90
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
780 mOhms
|
- 20 V, 20 V
|
2.1 V
|
41 nC
|
- 55 C
|
+ 150 C
|
39 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 8A TO220-3 CoolMOS C3
- SPP08N80C3
- Infineon Technologies
-
1:
$3.21
-
116En existencias
|
N.º de artículo de Mouser
726-SPP08N80C3
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 8A TO220-3 CoolMOS C3
|
|
116En existencias
|
|
|
$3.21
|
|
|
$2.07
|
|
|
$1.42
|
|
|
$1.15
|
|
|
Ver
|
|
|
$1.06
|
|
|
$1.03
|
|
|
$1.00
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
8 A
|
650 mOhms
|
- 20 V, 20 V
|
2.1 V
|
45 nC
|
- 55 C
|
+ 150 C
|
104 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 17A D2PAK-2 CoolMOS C3
- SPB17N80C3
- Infineon Technologies
-
1:
$5.53
-
1,037En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPB17N80C3
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 17A D2PAK-2 CoolMOS C3
|
|
1,037En existencias
|
|
|
$5.53
|
|
|
$3.62
|
|
|
$2.70
|
|
|
$2.32
|
|
|
$1.96
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
800 V
|
17 A
|
290 mOhms
|
- 20 V, 20 V
|
2.1 V
|
88 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 4A TO220-3 CoolMOS C3
- SPP04N80C3
- Infineon Technologies
-
1:
$2.41
-
870En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPP04N80C3
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 4A TO220-3 CoolMOS C3
|
|
870En existencias
|
|
|
$2.41
|
|
|
$1.53
|
|
|
$1.04
|
|
|
$0.835
|
|
|
Ver
|
|
|
$0.748
|
|
|
$0.699
|
|
|
$0.668
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
4 A
|
1.1 Ohms
|
- 20 V, 20 V
|
2.1 V
|
31 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 4A TO220-3 CoolMOS C3
- SPP04N80C3XKSA1
- Infineon Technologies
-
1:
$2.38
-
42En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPP04N80C3XKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 4A TO220-3 CoolMOS C3
|
|
42En existencias
|
|
|
$2.38
|
|
|
$1.16
|
|
|
$1.04
|
|
|
$0.799
|
|
|
Ver
|
|
|
$0.702
|
|
|
$0.694
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
4 A
|
1.1 Ohms
|
- 20 V, 20 V
|
2.1 V
|
31 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 6A TO220-3 CoolMOS C3
- SPP06N80C3
- Infineon Technologies
-
1:
$2.58
-
358En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPP06N80C3
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 6A TO220-3 CoolMOS C3
|
|
358En existencias
|
|
|
$2.58
|
|
|
$1.66
|
|
|
$1.13
|
|
|
$0.955
|
|
|
Ver
|
|
|
$0.846
|
|
|
$0.80
|
|
|
$0.764
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
900 mOhms
|
- 20 V, 20 V
|
2.1 V
|
31 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 6A TO220-3 CoolMOS C3
- SPP06N80C3XKSA1
- Infineon Technologies
-
1:
$2.42
-
85En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPP06N80C3XKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 6A TO220-3 CoolMOS C3
|
|
85En existencias
|
|
|
$2.42
|
|
|
$1.29
|
|
|
$1.14
|
|
|
$0.923
|
|
|
$0.794
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
780 mOhms
|
- 20 V, 20 V
|
2.1 V
|
41 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 11A TO247-3 CoolMOS C3
- SPW11N80C3
- Infineon Technologies
-
1:
$4.28
-
Se puede aplicar una tarifa de 10 % si el envío es a los Estados Unidos.
-
35En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPW11N80C3
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 11A TO247-3 CoolMOS C3
|
|
35En existencias
|
|
|
$4.28
|
|
|
$2.80
|
|
|
$2.09
|
|
|
$1.74
|
|
|
Ver
|
|
|
$1.62
|
|
|
$1.52
|
Se puede aplicar una tarifa de 10 % si el envío es a los Estados Unidos.
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
800 V
|
11 A
|
390 mOhms
|
- 20 V, 20 V
|
2.1 V
|
85 nC
|
- 55 C
|
+ 150 C
|
156 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 17A TO247-3 CoolMOS C3
- SPW17N80C3FKSA1
- Infineon Technologies
-
1:
$6.27
-
284En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPW17N80C3FKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 17A TO247-3 CoolMOS C3
|
|
284En existencias
|
|
|
$6.27
|
|
|
$3.51
|
|
|
$2.80
|
|
|
$2.59
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
800 V
|
17 A
|
250 mOhms
|
- 20 V, 20 V
|
2.1 V
|
117 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 11A TO220FP-3 CoolMOS C3
- SPA11N80C3XKSA1
- Infineon Technologies
-
1:
$3.60
-
855En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPA11N80C3XKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 11A TO220FP-3 CoolMOS C3
|
|
855En existencias
|
|
|
$3.60
|
|
|
$1.81
|
|
|
$1.64
|
|
|
$1.32
|
|
|
$1.23
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
800 V
|
11 A
|
390 mOhms
|
- 20 V, 20 V
|
2.1 V
|
85 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 11A TO220-3 CoolMOS C3
- SPP11N80C3XKSA1
- Infineon Technologies
-
1:
$4.05
-
202En existencias
-
1,000Se espera el 03/11/2027
-
NRND
|
N.º de artículo de Mouser
726-SPP11N80C3XKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 11A TO220-3 CoolMOS C3
|
|
202En existencias
1,000Se espera el 03/11/2027
|
|
|
$4.05
|
|
|
$2.38
|
|
|
$1.89
|
|
|
$1.55
|
|
|
$1.41
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
11 A
|
390 mOhms
|
- 20 V, 20 V
|
2.1 V
|
85 nC
|
- 55 C
|
+ 150 C
|
156 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 17A TO220-3 CoolMOS C3
- SPP17N80C3XKSA1
- Infineon Technologies
-
1:
$5.60
-
282En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPP17N80C3XKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 17A TO220-3 CoolMOS C3
|
|
282En existencias
|
|
|
$5.60
|
|
|
$2.93
|
|
|
$2.67
|
|
|
$2.23
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
17 A
|
290 mOhms
|
- 20 V, 20 V
|
2.1 V
|
88 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 8A TO220FP-3 CoolMOS C3
- SPA08N80C3
- Infineon Technologies
-
1:
$3.51
-
66En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPA08N80C3
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 8A TO220FP-3 CoolMOS C3
|
|
66En existencias
|
|
|
$3.51
|
|
|
$2.28
|
|
|
$1.60
|
|
|
$1.34
|
|
|
Ver
|
|
|
$1.24
|
|
|
$1.17
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
8 A
|
560 mOhms
|
- 20 V, 20 V
|
2.1 V
|
45 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 17A TO220-3 CoolMOS C3
- SPP17N80C3
- Infineon Technologies
-
1:
$5.86
-
1En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPP17N80C3
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 17A TO220-3 CoolMOS C3
|
|
1En existencias
|
|
|
$5.86
|
|
|
$3.84
|
|
|
$2.83
|
|
|
$2.51
|
|
|
$2.23
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
17 A
|
290 mOhms
|
- 20 V, 20 V
|
2.1 V
|
88 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 11A TO220FP-3 CoolMOS C3
- SPA11N80C3
- Infineon Technologies
-
1:
$3.70
-
748Se espera el 08/24/2026
-
NRND
|
N.º de artículo de Mouser
726-SPA11N80C3
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 11A TO220FP-3 CoolMOS C3
|
|
748Se espera el 08/24/2026
|
|
|
$3.70
|
|
|
$2.41
|
|
|
$1.69
|
|
|
$1.41
|
|
|
Ver
|
|
|
$1.30
|
|
|
$1.23
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
800 V
|
11 A
|
450 mOhms
|
- 20 V, 20 V
|
2.1 V
|
64 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
Puerto Rico