|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IQE022N06LM5CGATMA1
- Infineon Technologies
-
1:
$2.88
-
4,456En existencias
|
N.º de artículo de Mouser
726-IQE022N06LM5CGAT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
4,456En existencias
|
|
|
$2.88
|
|
|
$1.81
|
|
|
$1.28
|
|
|
$1.04
|
|
|
Ver
|
|
|
$0.813
|
|
|
$0.96
|
|
|
$0.953
|
|
|
$0.813
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TTFN-9
|
N-Channel
|
1 Channel
|
60 V
|
151 A
|
2.2 mOhms
|
- 20 V, 20 V
|
2.3 V
|
53 nC
|
- 55 C
|
+ 175 C
|
100 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IQE030N06NM5CGSCATMA1
- Infineon Technologies
-
1:
$3.55
-
4,772En existencias
|
N.º de artículo de Mouser
726-IQE030N06NM5CGSC
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
4,772En existencias
|
|
|
$3.55
|
|
|
$2.31
|
|
|
$1.62
|
|
|
$1.42
|
|
|
$1.19
|
|
Min.: 1
Mult.: 1
:
6,000
|
|
|
Si
|
SMD/SMT
|
WHTFN-9
|
N-Channel
|
1 Channel
|
60 V
|
21 A
|
3 mOhms
|
- 20 V, 20 V
|
3.3 V
|
49 nC
|
- 55 C
|
+ 175 C
|
2.5 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 FL OptiMOS
- BSC010N04LSATMA1
- Infineon Technologies
-
1:
$3.15
-
49,057En existencias
|
N.º de artículo de Mouser
726-BSC010N04LSATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 FL OptiMOS
|
|
49,057En existencias
|
|
|
$3.15
|
|
|
$1.93
|
|
|
$1.46
|
|
|
$1.26
|
|
|
$0.879
|
|
|
Ver
|
|
|
$1.16
|
|
|
$0.876
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
100 A
|
1 mOhms
|
- 20 V, 20 V
|
1.2 V
|
133 nC
|
- 55 C
|
+ 150 C
|
139 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IST011N06NM5AUMA1
- Infineon Technologies
-
1:
$6.11
-
2,869En existencias
|
N.º de artículo de Mouser
726-IST011N06NM5AUMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
2,869En existencias
|
|
|
$6.11
|
|
|
$4.01
|
|
|
$2.95
|
|
|
$2.62
|
|
|
$2.34
|
|
|
$2.34
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
60 V
|
399 A
|
1.1 Ohms
|
- 20 V, 20 V
|
3.3 V
|
110 nC
|
- 55 C
|
+ 175 C
|
313 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IQE030N06NM5CGATMA1
- Infineon Technologies
-
1:
$2.82
-
4,063En existencias
|
N.º de artículo de Mouser
726-IQE030N06NM5CGAT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
4,063En existencias
|
|
|
$2.82
|
|
|
$1.81
|
|
|
$1.25
|
|
|
$0.84
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
60 V
|
137 A
|
3 mOhms
|
- 20 V, 20 V
|
3.3 V
|
39 nC
|
- 55 C
|
+ 175 C
|
107 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 5 60 V switching optimized power MOSFET in PQFN 5x6 Dual-Side Cooled Drain-Down package
- ISC013N06NM5SCATMA1
- Infineon Technologies
-
1:
$5.96
-
8,000En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-ISC013N06NM5SCAT
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 5 60 V switching optimized power MOSFET in PQFN 5x6 Dual-Side Cooled Drain-Down package
|
|
8,000En existencias
|
|
|
$5.96
|
|
|
$3.90
|
|
|
$2.87
|
|
|
$2.55
|
|
|
Ver
|
|
|
$2.05
|
|
|
$2.26
|
|
|
$2.15
|
|
|
$2.05
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
WSON-8
|
N-Channel
|
1 Channel
|
60 V
|
276 A
|
1.3 mOhms
|
20 V
|
3.3 V
|
90 nC
|
- 55 C
|
+ 175 C
|
188 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 5 60 V switching optimized power MOSFET in PQFN 5x6 Drain-Down package
- ISC015N06NM5ATMA1
- Infineon Technologies
-
1:
$3.32
-
3,126En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-ISC015N06NM5ATMA
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 5 60 V switching optimized power MOSFET in PQFN 5x6 Drain-Down package
|
|
3,126En existencias
|
|
|
$3.32
|
|
|
$2.15
|
|
|
$1.48
|
|
|
$1.24
|
|
|
Ver
|
|
|
$0.977
|
|
|
$1.15
|
|
|
$1.07
|
|
|
$0.977
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
259 A
|
1.5 mOhms
|
20 V
|
3.3 V
|
70 nC
|
- 55 C
|
+ 175 C
|
188 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 5 Power-Transistor,60V
- IQFH61N06NM5ATMA1
- Infineon Technologies
-
1:
$5.85
-
2,831En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-IQFH61N06NM5ATMA
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 5 Power-Transistor,60V
|
|
2,831En existencias
|
|
|
$5.85
|
|
|
$3.83
|
|
|
$3.44
|
|
|
$2.24
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
TSON-12
|
N-Channel
|
1 Channel
|
60 V
|
510 A
|
1 mOhms
|
- 20 V, 20 V
|
2.8 V
|
190 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- ISC015N06NM5LF2ATMA1
- Infineon Technologies
-
1:
$5.58
-
9,955En existencias
|
N.º de artículo de Mouser
726-ISC015N06NM5LF2A
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
9,955En existencias
|
|
|
$5.58
|
|
|
$3.65
|
|
|
$2.72
|
|
|
$2.28
|
|
|
Ver
|
|
|
$1.98
|
|
|
$2.12
|
|
|
$1.98
|
|
|
$1.98
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
275 A
|
1.55 mOhms
|
- 20 V, 20 V
|
3.45 V
|
90 nC
|
- 55 C
|
+ 175 C
|
217 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IPT009N06NM5ATMA1
- Infineon Technologies
-
1:
$7.02
-
4,069En existencias
|
N.º de artículo de Mouser
726-IPT009N06NM5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
4,069En existencias
|
|
|
$7.02
|
|
|
$4.60
|
|
|
$3.39
|
|
|
$3.01
|
|
|
$2.85
|
|
|
$2.69
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
60 V
|
427 A
|
1.2 mOhms
|
- 20 V, 20 V
|
2.8 V
|
171 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- ISG0614N06NM5HSCATMA1
- Infineon Technologies
-
1:
$5.59
-
6,000Se espera el 07/28/2026
|
N.º de artículo de Mouser
726-ISG0614N06NM5HSC
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
6,000Se espera el 07/28/2026
|
|
|
$5.59
|
|
|
$3.72
|
|
|
$2.66
|
|
|
$2.41
|
|
|
$2.27
|
|
|
$2.27
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
TFN-10
|
N-Channel
|
2 Channel
|
60 V
|
233 A
|
1.6 mOhms
|
- 20 V, 20 V
|
3.3 V
|
68 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IPT008N06NM5LFATMA1
- Infineon Technologies
-
1:
$6.81
-
5,870En existencias
|
N.º de artículo de Mouser
726-IPT008N06NM5LFAT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
5,870En existencias
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
60 V
|
454 A
|
800 uOhms
|
- 20 V, 20 V
|
3.6 V
|
185 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60 V, N-Ch, 2.2 m? max, Logic Level, Automotive MOSFET, SSO8 (5x6), OptiMOS-5
- IAUC120N06S5L022ATMA1
- Infineon Technologies
-
1:
$2.82
-
3,794En existencias
-
5,000Se espera el 09/24/2026
|
N.º de artículo de Mouser
726-IAUC120N06S5L022
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60 V, N-Ch, 2.2 m? max, Logic Level, Automotive MOSFET, SSO8 (5x6), OptiMOS-5
|
|
3,794En existencias
5,000Se espera el 09/24/2026
|
|
|
$2.82
|
|
|
$1.81
|
|
|
$1.23
|
|
|
$1.05
|
|
|
Ver
|
|
|
$0.84
|
|
|
$0.923
|
|
|
$0.91
|
|
|
$0.84
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
170 A
|
2.2 mOhms
|
- 20 V, 20 V
|
1.7 V
|
77 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
AEC-Q101
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60 V, N-Ch, 3.2 m? max, Normal Level, Automotive MOSFET, SSO8 (5x6), OptiMOS-5
- IAUC120N06S5N032ATMA1
- Infineon Technologies
-
1:
$2.28
-
3,575En existencias
|
N.º de artículo de Mouser
726-IAUC120N06S5N032
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60 V, N-Ch, 3.2 m? max, Normal Level, Automotive MOSFET, SSO8 (5x6), OptiMOS-5
|
|
3,575En existencias
|
|
|
$2.28
|
|
|
$1.45
|
|
|
$0.974
|
|
|
$0.79
|
|
|
Ver
|
|
|
$0.636
|
|
|
$0.708
|
|
|
$0.699
|
|
|
$0.636
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
120 A
|
3.23 mOhms
|
- 20 V, 20 V
|
2.8 V
|
47 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
AEC-Q101
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IPTC012N06NM5ATMA1
- Infineon Technologies
-
1:
$4.68
-
2,544En existencias
|
N.º de artículo de Mouser
726-IPTC012N06NM5ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
2,544En existencias
|
|
|
$4.68
|
|
|
$3.07
|
|
|
$2.58
|
|
|
$2.58
|
|
|
$1.68
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
Si
|
SMD/SMT
|
HDSOP-16
|
N-Channel
|
1 Channel
|
60 V
|
311 A
|
1.2 mOhms
|
- 20 V, 20 V
|
2.1 V
|
106 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IQE022N06LM5SCATMA1
- Infineon Technologies
-
1:
$3.52
-
5,268En existencias
|
N.º de artículo de Mouser
726-IQE022N06LM5SCAT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
5,268En existencias
|
|
|
$3.52
|
|
|
$2.29
|
|
|
$1.61
|
|
|
$1.35
|
|
|
Ver
|
|
|
$1.33
|
|
|
$1.33
|
|
|
$1.33
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
:
6,000
|
|
|
Si
|
SMD/SMT
|
WHSON-8
|
N-Channel
|
1 Channel
|
60 V
|
151 A
|
|
- 20 V, 20 V
|
2.3 V
|
|
- 55 C
|
+ 175 C
|
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IQE030N06NM5SCATMA1
- Infineon Technologies
-
1:
$4.36
-
1,553En existencias
|
N.º de artículo de Mouser
726-IQE030N06NM5SCAT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
1,553En existencias
|
|
|
$4.36
|
|
|
$2.85
|
|
|
$2.13
|
|
|
$1.78
|
|
|
Ver
|
|
|
$1.55
|
|
|
$1.65
|
|
|
$1.55
|
|
|
$1.55
|
|
Min.: 1
Mult.: 1
:
6,000
|
|
|
Si
|
SMD/SMT
|
WHSON-8
|
N-Channel
|
1 Channel
|
60 V
|
21 A
|
3 mOhms
|
- 20 V, 20 V
|
3.3 V
|
49 nC
|
- 55 C
|
+ 175 C
|
2.5 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- ISG0614N06NM5HATMA1
- Infineon Technologies
-
1:
$5.20
-
3,411En existencias
|
N.º de artículo de Mouser
726-ISG0614N06NM5HAT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
3,411En existencias
|
|
|
$5.20
|
|
|
$3.46
|
|
|
$2.46
|
|
|
$2.19
|
|
|
$2.07
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
TFN-10
|
N-Channel
|
2 Channel
|
60 V
|
233 A
|
1.6 mOhms
|
- 20 V, 20 V
|
3.3 V
|
68 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- BSC022N04LS6ATMA1
- Infineon Technologies
-
1:
$1.87
-
33,238En existencias
-
190,000En pedido
|
N.º de artículo de Mouser
726-BSC022N04LS6ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
33,238En existencias
190,000En pedido
Existencias:
33,238 Se puede enviar inmediatamente
En pedido:
95,000 Se espera el 07/29/2026
95,000 Se espera el 04/01/2027
Plazo de entrega de fábrica:
52 Semanas
|
|
|
$1.87
|
|
|
$1.16
|
|
|
$0.759
|
|
|
$0.597
|
|
|
$0.592
|
|
|
$0.592
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-FL-8
|
N-Channel
|
1 Channel
|
40 V
|
100 A
|
2.2 mOhms
|
- 20 V, 20 V
|
1.3 V
|
28 nC
|
- 55 C
|
+ 175 C
|
79 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET N CH 60V 95A TO-220AB
- IRFB7545PBF
- Infineon Technologies
-
1:
$1.60
-
Se puede aplicar una tarifa de 38 % si el envío es a los Estados Unidos.
-
54,673En existencias
|
N.º de artículo de Mouser
942-IRFB7545PBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET N CH 60V 95A TO-220AB
|
|
54,673En existencias
|
|
|
$1.60
|
|
|
$0.936
|
|
|
$0.683
|
|
|
$0.567
|
|
|
$0.53
|
Se puede aplicar una tarifa de 38 % si el envío es a los Estados Unidos.
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
60 V
|
95 A
|
4.9 mOhms
|
- 20 V, 20 V
|
3.7 V
|
75 nC
|
- 55 C
|
+ 175 C
|
125 W
|
Enhancement
|
|
StrongIRFET
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IQE022N06LM5CGSCATMA1
- Infineon Technologies
-
1:
$5.23
-
87En existencias
-
6,000Se espera el 02/18/2027
|
N.º de artículo de Mouser
726-IQE022N06LM5CGSC
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
87En existencias
6,000Se espera el 02/18/2027
|
|
|
$5.23
|
|
|
$3.45
|
|
|
$2.34
|
|
|
$1.95
|
|
|
Ver
|
|
|
$1.66
|
|
|
$1.77
|
|
|
$1.71
|
|
|
$1.66
|
|
Min.: 1
Mult.: 1
:
6,000
|
|
|
Si
|
SMD/SMT
|
WHSON-8
|
N-Channel
|
1 Channel
|
60 V
|
151 A
|
|
- 20 V, 20 V
|
2.3 V
|
|
- 55 C
|
+ 175 C
|
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 5 Power-Transistor,60V
- IQFH86N06NM5ATMA1
- Infineon Technologies
-
1:
$7.30
-
290En existencias
|
N.º de artículo de Mouser
726-IQFH86N06NM5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 5 Power-Transistor,60V
|
|
290En existencias
|
|
|
$7.30
|
|
|
$4.83
|
|
|
$3.52
|
|
|
$3.04
|
|
|
$2.72
|
|
|
$2.72
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
TSON-12
|
N-Channel
|
1 Channel
|
60 V
|
394 A
|
1.47 mOhms
|
- 20 V, 20 V
|
2.8 V
|
137 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 5 Power-Transistor,60V
- IQFH99N06NM5ATMA1
- Infineon Technologies
-
1:
$4.92
-
300En existencias
|
N.º de artículo de Mouser
726-IQFH99N06NM5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 5 Power-Transistor,60V
|
|
300En existencias
|
|
|
$4.92
|
|
|
$3.22
|
|
|
$2.41
|
|
|
$2.02
|
|
|
$1.96
|
|
|
$1.76
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
TSON-12
|
N-Channel
|
1 Channel
|
60 V
|
339 A
|
1.72 mOhms
|
- 20 V, 20 V
|
2.8 V
|
115 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_)40V 60V)
- IAUC41N06S5N102ATMA1
- Infineon Technologies
-
1:
$1.78
-
7,437En existencias
|
N.º de artículo de Mouser
726-IAUC41N06S5N102A
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_)40V 60V)
|
|
7,437En existencias
|
|
|
$1.78
|
|
|
$1.10
|
|
|
$0.723
|
|
|
$0.569
|
|
|
$0.38
|
|
|
Ver
|
|
|
$0.486
|
|
|
$0.449
|
|
|
$0.377
|
|
|
$0.37
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
41 A
|
10.2 mOhms
|
- 20 V, 20 V
|
3.4 V
|
12.5 nC
|
- 55 C
|
+ 175 C
|
42 W
|
Enhancement
|
AEC-Q101
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- ISC010N06NM5ATMA1
- Infineon Technologies
-
1:
$4.33
-
3,060En existencias
|
N.º de artículo de Mouser
726-ISC010N06NM5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
3,060En existencias
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
60 V
|
330 A
|
1.05 mOhms
|
- 20 V, 20 V
|
3.3 V
|
115 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
Puerto Rico