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Diodes Incorporated Schottky SBR® Super Barrier Rectifiers

Diodes Inc. Schottky SBR® Super Barrier Rectifiers are Schottky rectifiers that utilize an MOS manufacturing process. This creates a superior two-terminal device that has a lower forward voltage (VF) than comparable Schottky diodes. They possess the thermal stability and high-reliability characteristics of PN epitaxial diodes.

SBR diodes are designed for high power, low loss and fast switching applications. A MOS channel within its structure forms a low potential barrier for the majority carriers, thus SBR's forward bias operation at low voltage is similar to Schottky diode. However, the leakage current is lower than Schottky diode in reverse bias due to the overlap of the P-N depletion layers and the absence of potential barrier reduction due to the image charge.

Features

  • Reduced ultra-low forward voltage drop (VF); better efficiency and cooler operation
  • Reduced high-temperature reverse leakage; increased reliability against thermal runaway failure in high-temperature operation
  • Low power loss, high efficiency
  • Low reverse leakage current

Applications

  • Switch Mode Power Supplies (SMPS)
  • Buck/boost diodes for DC-DC conversion
  • Battery chargers
  • Reverse polarity protection
  • Solar panels
  • LED Lighting
  • Automotive applications

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View Results ( 3 ) Page
N.º de artículo Hoja de datos Paquete / Cubierta If - Corriente directa Vrrm - Tensión inversa repetitiva
SBRT20U50SLP-13 SBRT20U50SLP-13 Hoja de datos PowerDI5060-8 20 A 50 V
SBRT15U50SP5-13D SBRT15U50SP5-13D Hoja de datos PowerDI5-3 15 A 50 V
SBRT3M30LP-7 SBRT3M30LP-7 Hoja de datos U-DFN-3030-8 3 A 30 V
Publicado: 2015-07-30 | Actualizado: 2022-03-11