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Infineon Technologies 300V to 1200V IGBTs

Infineon 300-1200V IGBTs have an extensive portfolio of IGBTs that achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.

Features

  • Low VCE (ON) trench IGBT technology
  • Low switching losses
  • Square RBSOA
  • 100% of the parts tested for ILM
  • Positive VCE(ON) temperature co-efficient
  • Ultra-fast soft recovery co-pack diode
  • Tight parameter distribution
  • Lead-Free

Applications

  • U.P.S.
  • Welding
  • Solar Inverter
  • Induction Heating

Related IGBTs

Infineon Technologies IGBT Gate Drives with Murata DC-DC Converters

Used in high power inverter and converter circuits.

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N.º de artículo Hoja de datos Máx. voltaje VCEO colector-emisor Voltaje de saturación colector-emisor Máximo voltaje puerta-emisor Colector de Corriente Continua a 25 C Dp - Disipación de potencia
IKP10N60T IKP10N60T Hoja de datos 600 V 1.5 V - 20 V, 20 V 24 A 110 W
IKW20N60T IKW20N60T Hoja de datos 600 V 1.5 V - 20 V, 20 V 41 A 166 W
IKP20N60T IKP20N60T Hoja de datos 600 V 1.5 V - 20 V, 20 V 41 A 166 W

Infineon Power and Sensing Selection Guide

Publicado: 2011-09-20 | Actualizado: 2025-10-01