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IXYS IX4 Ultra-Junction Power MOSFETs

IXYS IX4 Ultra-Junction Power MOSFETs are avalanche-rated, N-channel enhancement-mode MOSFETs with a 200V drain-source breakdown voltage. The IXYS IX4 Ultra-Junction Power MOSFETs come in a TO-220 (IXTP) or TO-263 (IXTA) package and offer 86A or 94A continuous drain current.

Features

  • 1-channel
  • N-channel enhancement-mode
  • Avalanche rated
  • 200V drain-source breakdown voltage
  • Continuous drain current
    • 86A (IXTA86N20X4 and IXTP86N20X4)
    • 94A (IXTA94N20X4 and IXTP94N20X4)
  • RDS(on) drain-source resistance
    • 10.6mΩ (IXTA94N20X4 and IXTP94N20X4)
    • 13mΩ (IXTA86N20X4 and IXTP86N20X4)
  • Package
    • TO-220 (IXTP86N20X4, IXTP94N20X4, and 747-IXTP120N20X4)
    • TO-263 (IXTA86N20X4 and IXTA94N20X4)
    • TO-247 (747-IXTH120N20X4)

Schematic

Schematic - IXYS IX4 Ultra-Junction Power MOSFETs

Datasheets

Related MOSFETs

IXYS IXT 200V X4 Ultra Junction Power MOSFETs

N-channel devices with either 10.6mΩ, 13mΩ, or 21mΩ RDS(on) and a 200V maximum drain-source voltage.

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Publicado: 2022-01-12 | Actualizado: 2022-03-16