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Micro Commercial Components (MCC) SICWx Silicon Carbide (SiC) MOSFETs

Micro Commercial Components (MCC) SICWx Silicon Carbide (SiC) MOSFETs are high-speed switching 650V SiC MOSFETs. These MOSFETs utilize SiC MOSFET technology and are well-suited for high-voltage applications, providing reliable operation in harsh industrial environments. The SICWx MOSFETs are designed with low RDS(on) and low gate charge to reduce switching losses and contribute to higher overall system efficiency. The efficiency-boosting design and TO-247 package deliver superior thermal performance, while the 3-pin or 4-pin (Kelvin-source pin) options enhance the versatility. The SICWx MOSFETs are made with rugged design and avalanche capable to enable better thermal management and efficiency. These MOSFETs are ideally used in power supplies, telecommunication, renewable energy systems, and motor drives.

Features

  • SiC MOSFET technology
  • High-speed switching
  • 650V drain-source voltage (VDS)
  • 25mΩ to 100mΩ ranging low drain-source on-resistance RDS(on)
  • -55°C to 175°C operating temperature range
  • Reduction of heat sink requirements
  • Avalanche ruggedness for enhanced durability
  • Low switching losses
  • TO-247 3-pin and 4-pin package options
  • Kelvin-source connection for precision (4-pin only)
  • Halogen-free "Green" devices
  • Lead-free
  • RoHS compliant

Applications

  • Telecommunications:
    • Base station power amplifiers
    • Signal processing equipment
    • Network infrastructure
  • Uninterruptible Power Supply (UPS) systems:
    • UPS for critical systems
    • Backup power solutions
    • Power conditioning equipment
  • Renewable energy:
    • Solar inverters
    • Wind turbine power conversion
    • Energy storage systems (ESS)
  • Power supplies:
    • AC-DC converters
    • DC-DC converters
    • Power management systems

Additional Information

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View Results ( 6 ) Page
N.º de artículo Hoja de datos Id - Corriente de drenaje continua Dp - Disipación de potencia Transconductancia hacia delante - Mín. Rds On - Resistencia entre drenaje y fuente Vgs th - Tensión umbral entre puerta y fuente Vgs - Tensión entre puerta y fuente Vds - Tensión disruptiva entre drenaje y fuente Tiempo de subida Tiempo de caída Qg - Carga de puerta Tiempo de retardo de apagado típico Tiempo típico de demora de encendido Número de canales Tecnología Empaquetado Paquete / Cubierta RoHS - Mouser
SICW025N065H-BP SICW025N065H-BP Hoja de datos 107 A 375 W 18.2 S 35 mOhms 3.1 V - 10 V, + 22 V 650 V 50 ns 15 ns 275 nC 29 ns 28 ns 1 Channel SiC Bulk TO-247AB-3 Y
SICW025N065H4-BP SICW025N065H4-BP Hoja de datos 107 A 375 W 18.2 S 35 mOhms 3.1 V - 10 V, + 22 V 650 V 50 ns 15 ns 275 nC 29 ns 28 ns 1 Channel SiC Bulk TO-247-4 Y
SICW050N065H-BP SICW050N065H-BP Hoja de datos 60 A 250 W 13.2 S 65 mOhms 2.6 V - 10 V, + 25 V 650 V 17 ns 10 ns 121 nC 20 ns 16 ns 1 Channel SiC Bulk TO-247AB-3 Y
SICW050N065H4-BP SICW050N065H4-BP Hoja de datos 60 A 250 W 13.2 S 65 mOhms 2.6 V - 10 V, + 25 V 650 V 17 ns 10 ns 121 nC 20 ns 16 ns 1 Channel SiC Bulk TO-247-4 Y
SICW100N065H-BP SICW100N065H-BP Hoja de datos 32 A 166 W 8.5 S 130 mOhms 2.6 V - 10 V, + 25 V 650 V 17 ns 15 ns 66 nC 15 ns 15 ns 1 Channel SiC Bulk TO-247AB-3 Y
SICW100N065H4-BP SICW100N065H4-BP Hoja de datos 32 A 166 W 8.5 S 130 mOhms 2.6 V - 10 V, + 25 V 650 V 17 ns 15 ns 66 nC 15 ns 15 ns 1 Channel SiC Bulk TO-247-4 Y
Publicado: 2024-08-19 | Actualizado: 2025-06-17