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onsemi FGY4LxxT120SWD N-Channel 1200V IGBTs

onsemi FGY4LxxT120SWD N-Channel 1200V IGBTs use the novel field stop 7th generation IGBT technology and the Gen7 Diode in a TO-247 4−lead package. The onsemi FGY4LxxT120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like solar inverter, UPS and ESS.

Features

  • Maximum junction temperature (TJ) of 175°C
  • Collector current
    • FGY4L75T120SWD - 75A
    • FGY4L100T120SWD - 100A
    • FGY4L140T120SWD - 140A
    • FGY4L160T120SWD - 160A
  • Positive temperature coefficient
  • High current capability
  • Smooth and optimized switching
  • Low switching loss
  • RoHS compliant

Applications

  • Solar inverter
  • UPS
  • Energy storage system

Pin Connections

Schematic - onsemi FGY4LxxT120SWD N-Channel 1200V IGBTs
View Results ( 4 ) Page
N.º de artículo Hoja de datos Voltaje de saturación colector-emisor Colector de Corriente Continua a 25 C Dp - Disipación de potencia
FGY4L75T120SWD FGY4L75T120SWD Hoja de datos 1.37 V 150 A 652 W
FGY4L100T120SWD FGY4L100T120SWD Hoja de datos 1.7 V 200 A 1.071 kW
FGY4L140T120SWD FGY4L140T120SWD Hoja de datos 1.7 V 200 A 1.25 kW
FGY4L160T120SWD FGY4L160T120SWD Hoja de datos 1.7 V 200 A 1.5 kW
Publicado: 2024-07-23 | Actualizado: 2024-08-08