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onsemi NTMFSC006N Dual Cool N-Channel Power MOSFET

onsemi NTMFSC006N Dual Cool™ N-Channel Power MOSFET offers the power Trench® process in a dual-sided cooled packaging. This power MOSFET features ultra-low RDS(ON), 120V drain-to-source voltage, ±20V gate-to-source voltage, 1459A pulsed drain current, and 150°C maximum operating junction/storage temperature. The NTMFSC006N Dual Cool™ N-channel power MOSFET is 100% UIL tested and RoHS-compliant. Typical applications include AC-DC merchant power supply, primary DC-DC FET, synchronous rectifier, and DC-DC conversion.

Features

  • Dual Cool™ top side cooling PQFN package
  • Max RDS(on) = 6.1mΩ at VGS = 10V, ID = 44A
  • High-performance technology for extremely low RDS(on)
  • 100% UIL tested
  • RoHS-compliant

Specifications

  • 120V drain-to-source voltage
  • ±20V gate-to-source voltage
  • 1459A pulsed drain current
  • 150°C maximum operating junction/storage temperature
  • MSL1 robust packaging design

Applications

  • AC-DC merchant power supply
  • Primary DC-DC FET
  • Synchronous rectifier
  • DC-DC conversion

Typical Characteristics Graph

Performance Graph - onsemi NTMFSC006N Dual Cool N-Channel Power MOSFET
Publicado: 2023-12-20 | Actualizado: 2024-01-05