NXP Semiconductors MHT2012N Reference Circuit
NXP Semiconductors MHT2012N Reference Circuit is designed to enable rapid evaluation and prototyping of the MHT2012N RF LDMOS Integrated Power Amplifier. The NXP MHT2012N Power Amplifier is designed for RF energy applications operating in the 2450MHz ISM band and is qualified up to a maximum of 32VDD operation.
Features
- MHT2012N RF LDMOS Integrated Power Amplifier
- High gain simplifies layout and reduced PCB area compared to a discrete design
- Qualified up to a maximum of 32VDD operation
- On-chip input and interstage matching (50Ω input)
- Integrated quiescent current temperature compensation with enable/disable function
- Integrated ESD protection
Performance
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NXP Semiconductors RF Reference Circuits
Ease of use solutions designed to accelerate prototyping RF applications for faster time to market.
Publicado: 2019-11-18
| Actualizado: 2023-10-19