ROHM Semiconductor SCT3x 3rd Generation SiC Trench MOSFETs
ROHM Semiconductor SCT3x series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This design results in significantly lower switching loss and faster switching speeds, improving operational efficiency while reducing power loss in a variety of equipment. ROHM Semiconductor SCT3x includes 650V and 1200V variants for broad applicability.Features
- Low ON resistance improves inverter power density
- 17mΩ to 120mΩ (650V)
- 22mΩ to 160mΩ (1200V)
- Supports high-speed switching
- Minimal reverse recovery behavior of the body diode
- Small Qg and parasitic capacitance
- High-temperature operation (Tjmax = +175°C)
Applications
- Switch-mode power supplies
- Solar inverters
- Uninterruptible power supplies
- EV chargers
- Induction heating equipment
- Motor drives
- Trains
- Wind power converters
Videos
Publicado: 2016-10-11
| Actualizado: 2025-02-25
