ROHM Semiconductor SCT3x 3rd Generation SiC Trench MOSFETs

ROHM Semiconductor SCT3x series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This design results in significantly lower switching loss and faster switching speeds, improving operational efficiency while reducing power loss in a variety of equipment. ROHM Semiconductor SCT3x includes 650V and 1200V variants for broad applicability.

Features

  • Low ON resistance improves inverter power density
    • 17mΩ to 120mΩ (650V)
    • 22mΩ to 160mΩ (1200V)
  • Supports high-speed switching
  • Minimal reverse recovery behavior of the body diode
  • Small Qg and parasitic capacitance
  • High-temperature operation (Tjmax = +175°C)

Applications

  • Switch-mode power supplies
  • Solar inverters
  • Uninterruptible power supplies
  • EV chargers
  • Induction heating equipment
  • Motor drives
  • Trains
  • Wind power converters

Videos

Publicado: 2016-10-11 | Actualizado: 2025-02-25