|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPB60R360P7ATMA1
- Infineon Technologies
-
1:
$2.21
-
2,793En existencias
|
N.º de artículo de Mouser
726-IPB60R360P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
2,793En existencias
|
|
|
$2.21
|
|
|
$1.31
|
|
|
$0.946
|
|
|
$0.771
|
|
|
$0.683
|
|
|
$0.638
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
305 mOhms
|
- 20 V, 20 V
|
3 V
|
13 nC
|
- 55 C
|
+ 150 C
|
41 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPP60R360P7XKSA1
- Infineon Technologies
-
1:
$1.66
-
5,788En existencias
|
N.º de artículo de Mouser
726-IPP60R360P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
5,788En existencias
|
|
|
$1.66
|
|
|
$0.968
|
|
|
$0.842
|
|
|
$0.72
|
|
|
Ver
|
|
|
$0.653
|
|
|
$0.643
|
|
|
$0.638
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
305 mOhms
|
- 20 V, 20 V
|
3 V
|
13 nC
|
- 55 C
|
+ 150 C
|
41 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R180P7XKSA1
- Infineon Technologies
-
1:
$3.06
-
5,608En existencias
|
N.º de artículo de Mouser
726-IPP60R180P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
5,608En existencias
|
|
|
$3.06
|
|
|
$1.55
|
|
|
$1.39
|
|
|
$1.02
|
|
|
$1.01
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R085P7AUMA1
- Infineon Technologies
-
1:
$5.82
-
917En existencias
|
N.º de artículo de Mouser
726-IPL60R085P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
917En existencias
|
|
|
$5.82
|
|
|
$3.88
|
|
|
$2.78
|
|
|
$2.51
|
|
|
$2.35
|
|
|
$2.35
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
39 A
|
73 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 40 C
|
+ 150 C
|
154 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD60R600P7ATMA1
- Infineon Technologies
-
1:
$1.63
-
2,510En existencias
|
N.º de artículo de Mouser
726-IPD60R600P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
2,510En existencias
|
|
|
$1.63
|
|
|
$0.963
|
|
|
$0.661
|
|
|
$0.534
|
|
|
$0.438
|
|
|
Ver
|
|
|
$0.485
|
|
|
$0.411
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
6 A
|
490 mOhms
|
- 20 V, 20 V
|
3 V
|
9 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R285P7AUMA1
- Infineon Technologies
-
1:
$2.83
-
1,522En existencias
|
N.º de artículo de Mouser
726-IPL60R285P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,522En existencias
|
|
|
$2.83
|
|
|
$1.81
|
|
|
$1.29
|
|
|
$1.04
|
|
|
$0.975
|
|
|
$0.911
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
218 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 40 C
|
+ 150 C
|
59 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R180P7XKSA1
- Infineon Technologies
-
1:
$3.95
-
23,960En existencias
-
20,640Se espera el 06/25/2026
|
N.º de artículo de Mouser
726-IPW60R180P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
23,960En existencias
20,640Se espera el 06/25/2026
|
|
|
$3.95
|
|
|
$2.54
|
|
|
$1.87
|
|
|
$1.55
|
|
|
Ver
|
|
|
$1.44
|
|
|
$1.36
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R080P7XKSA1
- Infineon Technologies
-
1:
$5.41
-
14,433En existencias
-
6,500Se espera el 02/04/2027
|
N.º de artículo de Mouser
726-IPP60R080P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
14,433En existencias
6,500Se espera el 02/04/2027
|
|
|
$5.41
|
|
|
$2.82
|
|
|
$2.57
|
|
|
$2.45
|
|
|
Ver
|
|
|
$2.23
|
|
|
$2.13
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
129 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPA60R080P7XKSA1
- Infineon Technologies
-
1:
$5.41
-
2,273En existencias
|
N.º de artículo de Mouser
726-IPA60R080P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
2,273En existencias
|
|
|
$5.41
|
|
|
$2.82
|
|
|
$2.57
|
|
|
$2.13
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R060P7ATMA1
- Infineon Technologies
-
1:
$5.68
-
1,512En existencias
|
N.º de artículo de Mouser
726-IPB60R060P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,512En existencias
|
|
|
$5.68
|
|
|
$3.78
|
|
|
$2.97
|
|
|
$2.72
|
|
|
$2.54
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
164 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R080P7ATMA1
- Infineon Technologies
-
1:
$5.68
-
1,468En existencias
|
N.º de artículo de Mouser
726-IPB60R080P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,468En existencias
|
|
|
$5.68
|
|
|
$3.70
|
|
|
$2.90
|
|
|
$2.43
|
|
|
$2.25
|
|
|
$2.11
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
129 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R099P7ATMA1
- Infineon Technologies
-
1:
$4.78
-
1,213En existencias
|
N.º de artículo de Mouser
726-IPB60R099P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,213En existencias
|
|
|
$4.78
|
|
|
$3.16
|
|
|
$2.24
|
|
|
$1.93
|
|
|
$1.80
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
117 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R120P7ATMA1
- Infineon Technologies
-
1:
$4.14
-
5,343En existencias
|
N.º de artículo de Mouser
726-IPB60R120P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
5,343En existencias
|
|
|
$4.14
|
|
|
$2.72
|
|
|
$1.91
|
|
|
$1.71
|
|
|
$1.58
|
|
|
$1.48
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
100 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 55 C
|
+ 150 C
|
95 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R180P7ATMA1
- Infineon Technologies
-
1:
$3.12
-
7,946En existencias
|
N.º de artículo de Mouser
726-IPB60R180P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
7,946En existencias
|
|
|
$3.12
|
|
|
$2.02
|
|
|
$1.40
|
|
|
$1.13
|
|
|
$1.02
|
|
|
$1.01
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPB60R280P7ATMA1
- Infineon Technologies
-
1:
$2.60
-
6,898En existencias
|
N.º de artículo de Mouser
726-IPB60R280P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
6,898En existencias
|
|
|
$2.60
|
|
|
$1.68
|
|
|
$1.15
|
|
|
$0.915
|
|
|
$0.841
|
|
|
$0.785
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
12 A
|
214 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 55 C
|
+ 150 C
|
53 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPA60R120P7XKSA1
- Infineon Technologies
-
1:
$4.13
-
2,024En existencias
|
N.º de artículo de Mouser
726-IPA60R120P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
2,024En existencias
|
|
|
$4.13
|
|
|
$2.10
|
|
|
$1.91
|
|
|
$1.55
|
|
|
$1.48
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
100 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 55 C
|
+ 150 C
|
28 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA60R280P7SXKSA1
- Infineon Technologies
-
1:
$2.05
-
3,758En existencias
-
1,500Se espera el 12/31/2026
|
N.º de artículo de Mouser
726-IPA60R280P7SXKSA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
3,758En existencias
1,500Se espera el 12/31/2026
|
|
|
$2.05
|
|
|
$0.987
|
|
|
$0.883
|
|
|
$0.699
|
|
|
Ver
|
|
|
$0.591
|
|
|
$0.568
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
12 A
|
214 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 40 C
|
+ 150 C
|
24 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R045P7ATMA1
- Infineon Technologies
-
1:
$7.62
-
997En existencias
|
N.º de artículo de Mouser
726-IPB60R045P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
997En existencias
|
|
|
$7.62
|
|
|
$4.33
|
|
|
$3.54
|
|
|
$3.47
|
|
|
$3.22
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
120 V
|
61 A
|
45 mOhms
|
- 20 V, 20 V
|
1.7 V
|
90 nC
|
- 55 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPD60R180P7ATMA1
- Infineon Technologies
-
1:
$2.70
-
5,572En existencias
|
N.º de artículo de Mouser
726-IPD60R180P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
5,572En existencias
|
|
|
$2.70
|
|
|
$1.64
|
|
|
$1.16
|
|
|
$0.954
|
|
|
$0.884
|
|
|
$0.826
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
180 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD60R180P7SAUMA1
- Infineon Technologies
-
1:
$2.06
-
13,390En existencias
|
N.º de artículo de Mouser
726-IPD60R180P7SAUMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
13,390En existencias
|
|
|
$2.06
|
|
|
$1.32
|
|
|
$0.885
|
|
|
$0.702
|
|
|
$0.578
|
|
|
Ver
|
|
|
$0.643
|
|
|
$0.57
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
180 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 40 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD60R360P7ATMA1
- Infineon Technologies
-
1:
$1.90
-
4,125En existencias
|
N.º de artículo de Mouser
726-IPD60R360P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
4,125En existencias
|
|
|
$1.90
|
|
|
$1.21
|
|
|
$0.81
|
|
|
$0.64
|
|
|
$0.525
|
|
|
Ver
|
|
|
$0.585
|
|
|
$0.509
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
305 mOhms
|
- 20 V, 20 V
|
3 V
|
13 nC
|
- 55 C
|
+ 150 C
|
41 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD60R600P7SAUMA1
- Infineon Technologies
-
1:
$1.16
-
12,871En existencias
|
N.º de artículo de Mouser
726-IPD60R600P7SAUMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
12,871En existencias
|
|
|
$1.16
|
|
|
$0.717
|
|
|
$0.477
|
|
|
$0.369
|
|
|
$0.291
|
|
|
Ver
|
|
|
$0.334
|
|
|
$0.261
|
|
|
$0.258
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
6 A
|
600 mOhms
|
- 20 V, 20 V
|
3.5 V
|
9 nC
|
- 40 C
|
+ 150 C
|
30 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R065P7AUMA1
- Infineon Technologies
-
1:
$7.84
-
3,621En existencias
|
N.º de artículo de Mouser
726-IPL60R065P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
3,621En existencias
|
|
|
$7.84
|
|
|
$5.31
|
|
|
$3.88
|
|
|
$3.74
|
|
|
$3.49
|
|
|
$3.49
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
41 A
|
53 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 40 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R105P7AUMA1
- Infineon Technologies
-
1:
$4.90
-
2,794En existencias
|
N.º de artículo de Mouser
726-IPL60R105P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
2,794En existencias
|
|
|
$4.90
|
|
|
$3.27
|
|
|
$2.35
|
|
|
$2.05
|
|
|
$1.91
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
33 A
|
85 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 40 C
|
+ 150 C
|
137 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R125P7AUMA1
- Infineon Technologies
-
1:
$3.81
-
4,754En existencias
-
6,000Se espera el 07/02/2026
|
N.º de artículo de Mouser
726-IPL60R125P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
4,754En existencias
6,000Se espera el 07/02/2026
|
|
|
$3.81
|
|
|
$2.55
|
|
|
$1.87
|
|
|
$1.56
|
|
|
$1.53
|
|
|
$1.45
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
27 A
|
104 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 40 C
|
+ 150 C
|
111 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|