|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R180C7ATMA1
- Infineon Technologies
-
1:
$2.60
-
2,682En existencias
|
N.º de artículo de Mouser
726-IPB60R180C7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
2,682En existencias
|
|
|
$2.60
|
|
|
$1.75
|
|
|
$1.26
|
|
|
$1.26
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
180 mOhms
|
- 20 V, 20 V
|
3.5 V
|
24 nC
|
- 55 C
|
+ 150 C
|
68 W
|
Enhancement
|
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
- IPB65R099CFD7AATMA1
- Infineon Technologies
-
1:
$6.50
-
797En existencias
|
N.º de artículo de Mouser
726-IPB65R099CFD7AAT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
|
|
797En existencias
|
|
|
$6.50
|
|
|
$4.36
|
|
|
$3.14
|
|
|
$2.99
|
|
|
$2.72
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
38 A
|
99 mOhms
|
- 20 V, 20 V
|
3 V
|
127 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
AEC-Q101
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPB60R360P7ATMA1
- Infineon Technologies
-
1:
$2.21
-
2,793En existencias
|
N.º de artículo de Mouser
726-IPB60R360P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
2,793En existencias
|
|
|
$2.21
|
|
|
$1.31
|
|
|
$0.946
|
|
|
$0.771
|
|
|
$0.683
|
|
|
$0.638
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
305 mOhms
|
- 20 V, 20 V
|
3 V
|
13 nC
|
- 55 C
|
+ 150 C
|
41 W
|
Enhancement
|
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
- IPW65R050CFD7AXKSA1
- Infineon Technologies
-
1:
$10.68
-
1,126En existencias
|
N.º de artículo de Mouser
726-IPW65R050CFD7AXK
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
|
|
1,126En existencias
|
|
|
$10.68
|
|
|
$6.32
|
|
|
$5.36
|
|
|
$5.25
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
45 A
|
50 mOhms
|
- 20 V, 20 V
|
4 V
|
102 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
AEC-Q101
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
- IPW65R075CFD7AXKSA1
- Infineon Technologies
-
1:
$7.76
-
1,320En existencias
|
N.º de artículo de Mouser
726-IPW65R075CFD7AXK
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
|
|
1,320En existencias
|
|
|
$7.76
|
|
|
$5.00
|
|
|
$4.21
|
|
|
$3.95
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
32 A
|
75 mOhms
|
- 20 V, 20 V
|
4.5 V
|
68 nC
|
- 55 C
|
+ 150 C
|
171 W
|
Enhancement
|
AEC-Q101
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
- IPP65R115CFD7AAKSA1
- Infineon Technologies
-
1:
$5.61
-
335En existencias
|
N.º de artículo de Mouser
726-IPP65R115CFD7AAK
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
|
|
335En existencias
|
|
|
$5.61
|
|
|
$3.39
|
|
|
$2.76
|
|
|
$2.23
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
|
N-Channel
|
1 Channel
|
650 V
|
21 A
|
115 mOhms
|
- 20 V, 20 V
|
4.5 V
|
41 nC
|
- 40 C
|
+ 150 C
|
114 W
|
Enhancement
|
AEC-Q101
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R070CFD7ATMA1
- Infineon Technologies
-
1:
$6.76
-
831En existencias
|
N.º de artículo de Mouser
726-IPB60R070CFD7ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
831En existencias
|
|
|
$6.76
|
|
|
$4.25
|
|
|
$3.35
|
|
|
$3.17
|
|
|
$2.96
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
70 mOhms
|
- 20 V, 20 V
|
4.5 V
|
67 nC
|
- 55 C
|
+ 150 C
|
156 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
- IPB65R190CFD7AATMA1
- Infineon Technologies
-
1:
$4.15
-
812En existencias
|
N.º de artículo de Mouser
726-B65R190CFD7AATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
|
|
812En existencias
|
|
|
$4.15
|
|
|
$2.70
|
|
|
$1.97
|
|
|
$1.65
|
|
|
$1.54
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
14 A
|
190 mOhms
|
- 20 V, 20 V
|
4.5 V
|
28 nC
|
- 55 C
|
+ 150 C
|
77 W
|
Enhancement
|
AEC-Q101
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
- IPW65R035CFD7AXKSA1
- Infineon Technologies
-
1:
$12.99
-
Se puede aplicar una tarifa de 40 % si el envío es a los Estados Unidos.
-
180En existencias
|
N.º de artículo de Mouser
726-IPW65R035CFD7AXK
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
|
|
180En existencias
|
|
|
$12.99
|
|
|
$7.82
|
|
|
$6.75
|
Se puede aplicar una tarifa de 40 % si el envío es a los Estados Unidos.
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
63 A
|
35 mOhms
|
- 20 V, 20 V
|
4.5 V
|
145 nC
|
- 55 C
|
+ 150 C
|
305 W
|
Enhancement
|
AEC-Q101
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
- IPBE65R115CFD7AATMA1
- Infineon Technologies
-
1:
$5.90
-
571En existencias
|
N.º de artículo de Mouser
726-IPBE65R115CFD7AA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
|
|
571En existencias
|
|
|
$5.90
|
|
|
$3.94
|
|
|
$2.82
|
|
|
$2.56
|
|
|
$2.39
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
650 V
|
21 A
|
115 mOhms
|
- 20 V, 20 V
|
4 V
|
41 nC
|
- 40 C
|
+ 150 C
|
114 W
|
Enhancement
|
AEC-Q101
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
- IPBE65R190CFD7AATMA1
- Infineon Technologies
-
1:
$4.69
-
860En existencias
|
N.º de artículo de Mouser
726-IPBE65R190CFD7A1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
|
|
860En existencias
|
|
|
$4.69
|
|
|
$2.99
|
|
|
$2.24
|
|
|
$1.89
|
|
|
$1.70
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
14 A
|
190 mOhms
|
- 20 V, 20 V
|
4.5 V
|
28 nC
|
- 40 C
|
+ 150 C
|
77 W
|
Enhancement
|
AEC-Q101
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R185CFD7AUMA1
- Infineon Technologies
-
1:
$3.51
-
3,361En existencias
|
N.º de artículo de Mouser
726-IPL60R185CFD7AUM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
3,361En existencias
|
|
|
$3.51
|
|
|
$2.08
|
|
|
$1.54
|
|
|
$1.32
|
|
|
$1.30
|
|
|
$1.22
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
14 A
|
153 mOhms
|
- 20 V, 20 V
|
3.5 V
|
28 nC
|
- 40 C
|
+ 150 C
|
85 W
|
Enhancement
|
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
- IPWS65R050CFD7AXKSA1
- Infineon Technologies
-
1:
$10.47
-
Se puede aplicar una tarifa de 10 % si el envío es a los Estados Unidos.
-
151En existencias
|
N.º de artículo de Mouser
726-IPWS65R050CFD7AX
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
|
|
151En existencias
|
|
|
$10.47
|
|
|
$6.35
|
|
|
$5.67
|
|
|
$5.28
|
Se puede aplicar una tarifa de 10 % si el envío es a los Estados Unidos.
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
|
N-Channel
|
1 Channel
|
650 V
|
45 A
|
50 mOhms
|
- 20 V, 20 V
|
4.5 V
|
102 nC
|
- 40 C
|
+ 150 C
|
227 W
|
Enhancement
|
AEC-Q101
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
- IPBE65R075CFD7AATMA1
- Infineon Technologies
-
1:
$7.67
-
815En existencias
|
N.º de artículo de Mouser
726-IPBE65R075CFD7AA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
|
|
815En existencias
|
|
|
$7.67
|
|
|
$5.19
|
|
|
$3.78
|
|
|
$3.62
|
|
|
$3.39
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
TO-263-7-11
|
N-Channel
|
1 Channel
|
650 V
|
32 A
|
139 mOhms
|
- 20 V, 20 V
|
4 V
|
68 nC
|
- 55 C
|
+ 150 C
|
171 W
|
Enhancement
|
AEC-Q101
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
Infineon Technologies IPQC65R017CFD7AXTMA1
- IPQC65R017CFD7AXTMA1
- Infineon Technologies
-
1:
$17.51
-
1,074En existencias
|
N.º de artículo de Mouser
726-IPQC65R017CFD7AX
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
|
|
1,074En existencias
|
|
|
$17.51
|
|
|
$13.00
|
|
|
$12.09
|
|
|
$11.29
|
|
|
$11.29
|
|
Min.: 1
Mult.: 1
:
750
|
|
|
Si
|
SMD/SMT
|
HDSOP-22
|
|
1 Channel
|
650 V
|
136 A
|
31 mOhms
|
- 10 V, 10 V
|
4 V
|
236 nC
|
- 40 C
|
+ 150 C
|
694 W
|
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPD60R180CM8XTMA1
- Infineon Technologies
-
1:
$2.56
-
1,155En existencias
-
2,500Se espera el 06/11/2026
|
N.º de artículo de Mouser
726-IPD60R180CM8XTMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,155En existencias
2,500Se espera el 06/11/2026
|
|
|
$2.56
|
|
|
$1.53
|
|
|
$1.08
|
|
|
$0.897
|
|
|
$0.825
|
|
|
$0.765
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
TO-252-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
180 mOhms
|
- 20 V, 20 V
|
4.7 V
|
17 nC
|
- 55 C
|
+ 150 C
|
127 W
|
Enhancement
|
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPB60R280P7ATMA1
- Infineon Technologies
-
1:
$2.60
-
6,898En existencias
|
N.º de artículo de Mouser
726-IPB60R280P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
6,898En existencias
|
|
|
$2.60
|
|
|
$1.68
|
|
|
$1.15
|
|
|
$0.915
|
|
|
$0.841
|
|
|
$0.785
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
12 A
|
214 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 55 C
|
+ 150 C
|
53 W
|
Enhancement
|
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
- IPB65R050CFD7AATMA1
- Infineon Technologies
-
1:
$8.69
-
638En existencias
|
N.º de artículo de Mouser
726-IPB65R050CFD7AAT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
|
|
638En existencias
|
|
|
$8.69
|
|
|
$6.21
|
|
|
$4.58
|
|
|
$4.55
|
|
|
$4.25
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
45 A
|
50 mOhms
|
- 20 V, 20 V
|
4 V
|
102 nC
|
- 40 C
|
+ 150 C
|
227 W
|
Enhancement
|
AEC-Q101
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
Infineon Technologies IPDQ65R017CFD7AXTMA1
- IPDQ65R017CFD7AXTMA1
- Infineon Technologies
-
1:
$17.51
-
1,131En existencias
-
750Se espera el 09/03/2026
|
N.º de artículo de Mouser
726-IPDQ65R017CFD7AX
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
|
|
1,131En existencias
750Se espera el 09/03/2026
|
|
|
$17.51
|
|
|
$13.00
|
|
|
$12.09
|
|
|
$11.29
|
|
|
$11.29
|
|
Min.: 1
Mult.: 1
:
750
|
|
|
Si
|
SMD/SMT
|
HDSOP-22
|
N-Channel
|
1 Channel
|
15 V
|
58 A
|
17 mOhms
|
- 20 V, 20 V
|
1.6 V
|
29 nC
|
- 55 C
|
+ 150 C
|
89 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
Infineon Technologies IPDQ65R029CFD7AXTMA1
- IPDQ65R029CFD7AXTMA1
- Infineon Technologies
-
1:
$11.52
-
728En existencias
|
N.º de artículo de Mouser
726-IPDQ65R029CFD7AX
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
|
|
728En existencias
|
|
|
$11.52
|
|
|
$8.40
|
|
|
$7.64
|
|
|
$6.77
|
|
|
$6.77
|
|
Min.: 1
Mult.: 1
:
750
|
|
|
Si
|
SMD/SMT
|
HDSOP-22
|
|
1 Channel
|
650 V
|
85 A
|
53 mOhms
|
- 20 V, 20 V
|
4 V
|
139 nC
|
- 40 C
|
+ 150 C
|
463 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
Infineon Technologies IPDQ65R040CFD7AXTMA1
- IPDQ65R040CFD7AXTMA1
- Infineon Technologies
-
1:
$9.15
-
955En existencias
-
1,500Se espera el 02/11/2027
|
N.º de artículo de Mouser
726-IPDQ65R040CFD7AX
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
|
|
955En existencias
1,500Se espera el 02/11/2027
|
|
|
$9.15
|
|
|
$6.60
|
|
|
$5.65
|
|
|
$5.53
|
|
Min.: 1
Mult.: 1
:
750
|
|
|
Si
|
SMD/SMT
|
HDSOP-22
|
|
1 Channel
|
650 V
|
64 A
|
76 mOhms
|
- 20 V, 20 V
|
4 V
|
97 nC
|
- 40 C
|
+ 150 C
|
357 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
Infineon Technologies IPDQ65R060CFD7AXTMA1
- IPDQ65R060CFD7AXTMA1
- Infineon Technologies
-
1:
$6.56
-
488En existencias
|
N.º de artículo de Mouser
726-IPDQ65R060CFD7AX
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
|
|
488En existencias
|
|
|
$6.56
|
|
|
$4.67
|
|
|
$4.10
|
|
|
$3.87
|
|
|
$3.83
|
|
Min.: 1
Mult.: 1
:
750
|
|
|
Si
|
SMD/SMT
|
HDSOP-22
|
|
1 Channel
|
650 V
|
45 A
|
115 mOhms
|
- 20 V, 20 V
|
4 V
|
65 nC
|
- 40 C
|
+ 150 C
|
272 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
- IPB65R115CFD7AATMA1
- Infineon Technologies
-
1:
$5.61
-
826En existencias
|
N.º de artículo de Mouser
726-IPB65R115CFD7AAT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
|
|
826En existencias
|
|
|
$5.61
|
|
|
$3.46
|
|
|
$2.56
|
|
|
$2.30
|
|
|
$2.23
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
21 A
|
115 mOhms
|
- 20 V, 20 V
|
4 V
|
41 nC
|
- 40 C
|
+ 150 C
|
114 W
|
Enhancement
|
AEC-Q101
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD60R280P7ATMA1
- Infineon Technologies
-
1:
$2.22
-
606En existencias
-
2,500Se espera el 09/11/2026
|
N.º de artículo de Mouser
726-IPD60R280P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
606En existencias
2,500Se espera el 09/11/2026
|
|
|
$2.22
|
|
|
$1.42
|
|
|
$0.961
|
|
|
$0.764
|
|
|
$0.701
|
|
|
$0.632
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
12 A
|
214 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 55 C
|
+ 150 C
|
53 W
|
Enhancement
|
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
- IPP65R099CFD7AAKSA1
- Infineon Technologies
-
1:
$5.68
-
228En existencias
|
N.º de artículo de Mouser
726-IPP65R099CFD7AAK
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AUTOMOTIVE_COOLMOS
|
|
228En existencias
|
|
|
$5.68
|
|
|
$3.00
|
|
|
$2.59
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
|
N-Channel
|
1 Channel
|
650 V
|
24 A
|
99 mOhms
|
- 20 V, 20 V
|
4.5 V
|
53 nC
|
- 55 C
|
+ 150 C
|
127 W
|
Enhancement
|
AEC-Q101
|
CoolMOS
|
Tube
|
|