|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R085P7AUMA1
- Infineon Technologies
-
1:
$5.82
-
917En existencias
|
N.º de artículo de Mouser
726-IPL60R085P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
917En existencias
|
|
|
$5.82
|
|
|
$3.89
|
|
|
$2.79
|
|
|
$2.52
|
|
|
$2.35
|
|
|
$2.35
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
39 A
|
73 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 40 C
|
+ 150 C
|
154 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R180P7XKSA1
- Infineon Technologies
-
1:
$3.06
-
5,608En existencias
|
N.º de artículo de Mouser
726-IPP60R180P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
5,608En existencias
|
|
|
$3.06
|
|
|
$1.55
|
|
|
$1.39
|
|
|
$1.02
|
|
|
$1.01
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R180P7XKSA1
- Infineon Technologies
-
1:
$3.95
-
23,960En existencias
-
20,640Se espera el 06/25/2026
|
N.º de artículo de Mouser
726-IPW60R180P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
23,960En existencias
20,640Se espera el 06/25/2026
|
|
|
$3.95
|
|
|
$2.54
|
|
|
$1.87
|
|
|
$1.55
|
|
|
Ver
|
|
|
$1.44
|
|
|
$1.36
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R080P7XKSA1
- Infineon Technologies
-
1:
$5.41
-
14,433En existencias
-
6,500Se espera el 02/04/2027
|
N.º de artículo de Mouser
726-IPP60R080P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
14,433En existencias
6,500Se espera el 02/04/2027
|
|
|
$5.41
|
|
|
$2.82
|
|
|
$2.57
|
|
|
$2.45
|
|
|
Ver
|
|
|
$2.23
|
|
|
$2.13
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
129 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPA60R080P7XKSA1
- Infineon Technologies
-
1:
$5.41
-
2,273En existencias
|
N.º de artículo de Mouser
726-IPA60R080P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
2,273En existencias
|
|
|
$5.41
|
|
|
$2.82
|
|
|
$2.57
|
|
|
$2.13
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R060P7ATMA1
- Infineon Technologies
-
1:
$5.68
-
1,512En existencias
|
N.º de artículo de Mouser
726-IPB60R060P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,512En existencias
|
|
|
$5.68
|
|
|
$3.78
|
|
|
$2.97
|
|
|
$2.72
|
|
|
$2.54
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
164 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R080P7ATMA1
- Infineon Technologies
-
1:
$5.68
-
1,468En existencias
|
N.º de artículo de Mouser
726-IPB60R080P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,468En existencias
|
|
|
$5.68
|
|
|
$3.70
|
|
|
$2.90
|
|
|
$2.43
|
|
|
$2.25
|
|
|
$2.11
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
- 20 V, 20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
129 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R099P7ATMA1
- Infineon Technologies
-
1:
$4.78
-
1,213En existencias
|
N.º de artículo de Mouser
726-IPB60R099P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,213En existencias
|
|
|
$4.78
|
|
|
$3.16
|
|
|
$2.24
|
|
|
$1.93
|
|
|
$1.80
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
117 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R120P7ATMA1
- Infineon Technologies
-
1:
$4.14
-
5,343En existencias
|
N.º de artículo de Mouser
726-IPB60R120P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
5,343En existencias
|
|
|
$4.14
|
|
|
$2.72
|
|
|
$1.91
|
|
|
$1.71
|
|
|
$1.58
|
|
|
$1.48
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
100 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 55 C
|
+ 150 C
|
95 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R180P7ATMA1
- Infineon Technologies
-
1:
$3.12
-
7,946En existencias
|
N.º de artículo de Mouser
726-IPB60R180P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
7,946En existencias
|
|
|
$3.12
|
|
|
$2.02
|
|
|
$1.40
|
|
|
$1.13
|
|
|
$1.02
|
|
|
$1.01
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPA60R120P7XKSA1
- Infineon Technologies
-
1:
$4.13
-
2,024En existencias
|
N.º de artículo de Mouser
726-IPA60R120P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
2,024En existencias
|
|
|
$4.13
|
|
|
$2.10
|
|
|
$1.91
|
|
|
$1.55
|
|
|
$1.48
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
100 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 55 C
|
+ 150 C
|
28 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R045P7ATMA1
- Infineon Technologies
-
1:
$7.62
-
997En existencias
|
N.º de artículo de Mouser
726-IPB60R045P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
997En existencias
|
|
|
$7.62
|
|
|
$4.33
|
|
|
$3.54
|
|
|
$3.47
|
|
|
$3.22
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
120 V
|
61 A
|
45 mOhms
|
- 20 V, 20 V
|
1.7 V
|
90 nC
|
- 55 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPD60R180P7ATMA1
- Infineon Technologies
-
1:
$2.70
-
5,572En existencias
|
N.º de artículo de Mouser
726-IPD60R180P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
5,572En existencias
|
|
|
$2.70
|
|
|
$1.64
|
|
|
$1.16
|
|
|
$0.954
|
|
|
$0.884
|
|
|
$0.826
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
180 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD60R180P7SAUMA1
- Infineon Technologies
-
1:
$2.06
-
13,390En existencias
|
N.º de artículo de Mouser
726-IPD60R180P7SAUMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
13,390En existencias
|
|
|
$2.06
|
|
|
$1.32
|
|
|
$0.885
|
|
|
$0.702
|
|
|
$0.578
|
|
|
Ver
|
|
|
$0.643
|
|
|
$0.57
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
180 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 40 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R065P7AUMA1
- Infineon Technologies
-
1:
$7.84
-
3,621En existencias
|
N.º de artículo de Mouser
726-IPL60R065P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
3,621En existencias
|
|
|
$7.84
|
|
|
$5.31
|
|
|
$3.88
|
|
|
$3.74
|
|
|
$3.49
|
|
|
$3.49
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
41 A
|
53 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 40 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R105P7AUMA1
- Infineon Technologies
-
1:
$4.90
-
2,794En existencias
|
N.º de artículo de Mouser
726-IPL60R105P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
2,794En existencias
|
|
|
$4.90
|
|
|
$3.27
|
|
|
$2.35
|
|
|
$2.05
|
|
|
$1.91
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
33 A
|
85 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 40 C
|
+ 150 C
|
137 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R125P7AUMA1
- Infineon Technologies
-
1:
$3.81
-
4,754En existencias
-
6,000Se espera el 07/23/2026
|
N.º de artículo de Mouser
726-IPL60R125P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
4,754En existencias
6,000Se espera el 07/23/2026
|
|
|
$3.81
|
|
|
$2.55
|
|
|
$1.87
|
|
|
$1.56
|
|
|
$1.53
|
|
|
$1.45
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
27 A
|
104 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 40 C
|
+ 150 C
|
111 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R185P7AUMA1
- Infineon Technologies
-
1:
$3.07
-
4,395En existencias
|
N.º de artículo de Mouser
726-IPL60R185P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
4,395En existencias
|
|
|
$3.07
|
|
|
$1.99
|
|
|
$1.37
|
|
|
$1.11
|
|
|
$1.01
|
|
|
Ver
|
|
|
$1.06
|
|
|
$0.985
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
19 A
|
149 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 40 C
|
+ 150 C
|
81 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R060P7XKSA1
- Infineon Technologies
-
1:
$6.36
-
Se puede aplicar una tarifa de 40 % si el envío es a los Estados Unidos.
-
596En existencias
-
7,000En pedido
|
N.º de artículo de Mouser
726-IPP60R060P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
596En existencias
7,000En pedido
Existencias:
596 Se puede enviar inmediatamente
En pedido:
500 Se espera el 07/23/2026
6,500 Se espera el 10/22/2026
Plazo de entrega de fábrica:
19 Semanas
|
|
|
$6.36
|
|
|
$3.87
|
|
|
$3.27
|
|
|
$2.90
|
|
|
$2.57
|
Se puede aplicar una tarifa de 40 % si el envío es a los Estados Unidos.
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
164 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R099P7XKSA1
- Infineon Technologies
-
1:
$4.78
-
831En existencias
|
N.º de artículo de Mouser
726-IPP60R099P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
831En existencias
|
|
|
$4.78
|
|
|
$2.47
|
|
|
$2.24
|
|
|
$1.84
|
|
|
$1.80
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
117 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R024P7XKSA1
- Infineon Technologies
-
1:
$13.18
-
517En existencias
|
N.º de artículo de Mouser
726-IPW60R024P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
517En existencias
|
|
|
$13.18
|
|
|
$7.95
|
|
|
$6.92
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
101 A
|
24 mOhms
|
- 20 V, 20 V
|
3.5 V
|
164 nC
|
- 55 C
|
+ 150 C
|
291 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R060P7XKSA1
- Infineon Technologies
-
1:
$8.30
-
849En existencias
|
N.º de artículo de Mouser
726-IPW60R060P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
849En existencias
|
|
|
$8.30
|
|
|
$5.45
|
|
|
$4.47
|
|
|
$3.92
|
|
|
$3.51
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
164 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R099P7XKSA1
- Infineon Technologies
-
1:
$5.07
-
832En existencias
|
N.º de artículo de Mouser
726-IPW60R099P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
832En existencias
|
|
|
$5.07
|
|
|
$3.07
|
|
|
$2.54
|
|
|
$2.33
|
|
|
$2.16
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
117 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPA60R160P7XKSA1
- Infineon Technologies
-
1:
$3.14
-
366En existencias
|
N.º de artículo de Mouser
726-IPA60R160P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
366En existencias
|
|
|
$3.14
|
|
|
$2.03
|
|
|
$1.45
|
|
|
$1.21
|
|
|
Ver
|
|
|
$1.12
|
|
|
$1.06
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
23.8 A
|
374 mOhms
|
- 20 V, 20 V
|
4 V
|
44 nC
|
- 55 C
|
+ 150 C
|
26 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPAN60R180P7SXKSA1
- Infineon Technologies
-
1:
$2.57
-
778En existencias
|
N.º de artículo de Mouser
726-IPAN60R180P7SXKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
778En existencias
|
|
|
$2.57
|
|
|
$1.26
|
|
|
$1.13
|
|
|
$0.97
|
|
|
$0.772
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
340 mOhms
|
- 20 V, 20 V
|
3.5 V
|
25 nC
|
- 40 C
|
+ 150 C
|
26 W
|
Enhancement
|
CoolMOS
|
Tube
|
|