Nuevos Transistores de radiofrecuencia
Ampleon BLF981/BLF981S Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) Power Transistors are 170W devices designed for high-efficiency broadband applications across a wide frequency range from HF to 1400MHz. These transistors are particularly well-suited for use in broadcast transmitters, industrial, scientific, medical (ISM), avionics, and other non-cellular communication systems. Built to withstand extreme operating conditions, the Ampleon BLF981/BLF981S offers excellent ruggedness, high power gain, and integrated dual-sided ESD protection. The devices are optimized for both analog and digital signal transmission, ensuring reliable performance and easy power control. The BLF981 is housed in a SOT467C package, while the BLF981S comes in a SOT467B package, both supporting robust thermal management and long-term reliability.
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Ampleon BLF981/BLF981S LDMOS Power TransistorsDesigned for high-efficiency broadband applications across a frequency range from HF to 1400MHz.5/15/2025
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Ampleon BLP981 LDMOS Power Transistor170W power transistor engineered for broadband applications spanning from HF up to 1400MHz.5/15/2025 -
Mini-Circuits TAV1 TransistorsDesigned with highly repeatable D-pHEMT and E-pHEMT technology in a small 1.4mm x 1.2mm package.12/1/2023 -
CEL Low Noise FETs & ICsDeliver exceptional noise performance even beyond 20GHz with high associated gains.7/9/2023 -
Nexperia SOT23 Surface-Mounted Package ProductsContained in a plastic, surface-mounted, three terminals, 1.9mm pitch, 2.9mm x 1.3mm x 1mm package.7/26/2022 -
Nexperia SOT323 Surface-Mounted Package ProductsA plastic, 3 leads, 1.3mm pitch, 2mm x 1.25mm x 0.95mm body surface-mounted package.7/26/2022 -
Qorvo pHEMT GaAs discreto de 1600 µm QPD2160DOfrece 32.5 dBm de potencia de salida a P1dB, ganancia de 10.4 dB y eficiencia de potencia agregada del 63 % a 1 dB.4/19/2022 -
Qorvo pHEMT GaAs discreto de 1200 µm QPD2120DOfrece 31 dBm de potencia de salida a P1dB, ganancia de 11.5 dB y eficiencia de potencia agregada del 57 % a 1 dB.4/19/2022 -
Qorvo pHEMT GaAs discreto de 800 µm QPD2080DOfrece 29.5 dBm de potencia de salida a P1dB, ganancia de 11.5 dB y eficiencia de potencia agregada del 56 % a 1 dB.4/19/2022 -
Qorvo pHEMT GaAs discreto de 600 µm QPD2060DOfrece 28 dBm de potencia de salida a P1dB, ganancia de 12 dB y eficiencia de potencia agregada del 55 % a 1 dB.4/19/2022 -
Qorvo QPD2040D 400um Discrete GaAs pHEMT DieDesigned using Qorvo's proven standard 0.25um power pHEMT production process.2/14/2022 -
Qorvo QPD2018D 180um Discrete GaAs pHEMT DieUtilizes Qorvo's proven standard 0.25um power pHEMT production process.2/14/2022 -
Qorvo QPD2025D 250um Discrete GaAs pHEMT DieDeveloped using Qorvo's proven standard 0.25um power pHEMT production process.2/14/2022